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Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.654-662

2006

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Thermal instability of effective work function in metal/high-κ stack and its material dependence

IEEE electron device letters, 2004-11, Vol.25 (11), p.716-718

2004

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Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

IEEE transactions on electron devices, 2003-10, Vol.50 (10), p.2088-2094

2003

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Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

IEEE electron device letters, 2005-12, Vol.26 (12), p.882-884

2005

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Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device

Applied physics letters, 2010-05, Vol.96 (22)

2010

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Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Solid-state electronics, 2011-09, Vol.63 (1), p.115-118

2011

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Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3314-3320

2011

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DD14-04DD14-4

2011

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Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DD07-04DD07-5

2011

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Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Thin solid films, 2004-09, Vol.462-463 (Complete), p.90-95

2004

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Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.400-403

2010

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Thermally Stable NiSi Gate Electrode with TiN Barrier Metal for High-Density NAND Flash Memory Devices

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DA17-04DA17-4

2010

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The effect of crystallinity of HfO2 on the resistive memory switching reliability

2011 International Reliability Physics Symposium, 2011, p.6B.5.1-6B.5.5

2011

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Reliability of Recess-channel Gate Cell Transistor under Gate-Induced Drain Leakage Stress and Positive Bias Fowler-Nordheim Gate Stress

2006 European Solid-State Device Research Conference, 2006, p.415-418

2006

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Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, 2007, p.83-84

2007

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Improvement of memory performance by high temperature annealing of the Al 2 O 3 blocking layer in a charge-trap type flash memory device

Applied physics letters, 2010-06, Vol.96 (22), p.222902-222902-3

2010

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Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N2O ambient

IEEE electron device letters, 1999-09, Vol.20 (9), p.445-447

1999

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A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Solid-state electronics, 2000-07, Vol.44 (7), p.1289-1292

2000

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Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices

Applied physics letters, 2010-02, Vol.96 (5), p.052907-052907-3

2010

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Reliability of Thin Gate Oxides Irradiated under X-Ray Lithography Conditions

Japanese Journal of Applied Physics, 2001, Vol.40 (4S), p.2819-2822

2001

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Investigation of Reliability Degradation of Ultra-Thin Gate Oxides Irradiated under Electron-Beam Lithography Conditions

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2181-2185

2000

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Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

2012 4th IEEE International Memory Workshop, 2012, p.1-4

2012

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Mechanism of Date Retention Improvement by High Temperature Annealing of Al 2 O 3 Blocking Layer in Flash Memory Device

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Mechanism of Date Retention Improvement by High Temperature Annealing of Al 2 O 3 Blocking Layer in Flash Memory Device

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Thermal instability of effective work function in metal/high-κ stack and its material dependence

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device

Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device

Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Thermally Stable NiSi Gate Electrode with TiN Barrier Metal for High-Density NAND Flash Memory Devices

The effect of crystallinity of HfO2 on the resistive memory switching reliability

Reliability of Recess-channel Gate Cell Transistor under Gate-Induced Drain Leakage Stress and Positive Bias Fowler-Nordheim Gate Stress

Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory

Improvement of memory performance by high temperature annealing of the Al 2 O 3 blocking layer in a charge-trap type flash memory device

Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N2O ambient

A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation

Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices

Reliability of Thin Gate Oxides Irradiated under X-Ray Lithography Conditions

Investigation of Reliability Degradation of Ultra-Thin Gate Oxides Irradiated under Electron-Beam Lithography Conditions

Effect of Inserting Al2O3 Layer and Device Structure in HfO2-Based ReRAM for Low Power Operation

Mechanism of Date Retention Improvement by High Temperature Annealing of Al 2 O 3 Blocking Layer in Flash Memory Device

Mechanism of Date Retention Improvement by High Temperature Annealing of Al 2 O 3 Blocking Layer in Flash Memory Device

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

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