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Ab Initio Study of the Lowest-Lying Electronic States of LuCl Molecules

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2012-12, Vol.116 (49), p.12123-12128

2012

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Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD

Journal of alloys and compounds, 2010-02, Vol.491 (1-2), p.45-48

2010

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Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

Journal of alloys and compounds, 2010-09, Vol.506 (1), p.10-13

2010

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Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part I: Analysis of BAs thermodynamic properties

Journal of crystal growth, 2006-05, Vol.290 (2), p.410-418

2006

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Clustering effects in optical properties of BGaAs/GaAs epilayers

Journal of luminescence, 2009-09, Vol.129 (9), p.1010-1014

2009

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Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)

Chemical vapor deposition, 2006-09, Vol.12 (8-9), p.483-488

2006

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AES, LEED and PYS investigation of Au deposits on InSe/Si(1 1 1) substrate

Applied surface science, 2010-03, Vol.256 (10), p.3007-3009

2010

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Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-06, Vol.130 (1), p.66-72

2006

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Theoretical electronic investigation of the low-lying electronic states of the LuF molecule

Canadian journal of physics, 2009-11, Vol.87 (11), p.1163-1169

2009

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Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part II: BGaAs alloy formation

Journal of crystal growth, 2006-05, Vol.290 (2), p.419-425

2006

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Investigation by EELS and TRIM simulation method of the interaction of Ar + and N + ions with the InP compound

Applied surface science, 2009-10, Vol.256 (1), p.21-26

2009

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Study by EELS and EPES of the stability of InPO4/InP system

Applied surface science, 2008-09, Vol.254 (22), p.7394-7400

2008

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AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar + ions bombardment

Applied surface science, 2008-04, Vol.254 (13), p.4024-4028

2008

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Growth and characterization of high quality BxGa1-xAs/GaAs(0 0 1) epilayers

Journal of crystal growth, 2003-02, Vol.248, p.463-467

2003

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Low-temperature homoepitaxial growth of α-SiC on on-axis (0 0 0 1) substrate by vapor–liquid–solid mechanism

Journal of crystal growth, 2006-08, Vol.293 (2), p.433-437

2006

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Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

Applied physics letters, 2003-03, Vol.82 (12), p.1830-1832

2003

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Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures

Optical materials, 2003-10, Vol.24 (1), p.303-308

2003

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Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

Semiconductor science and technology, 2003-12, Vol.18 (12), p.1015-1023

2003

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Study of surface defects on 3C–SiC films grown on Si(1 1 1) by CVD

Journal of crystal growth, 2003-06, Vol.253 (1), p.95-101

2003

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Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Diamond and related materials, 2007, Vol.16 (1), p.37-45

2007

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Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS

Materials science forum, 2007-01, Vol.556-557, p.403-406

2007

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Defect morphology and strain of CVD grown 3C-SiC layers: effect of the carbonization process

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.561-565

2005

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Vapour–liquid–solid mechanism for the growth of SiC homoepitaxial layers by VPE

Journal of crystal growth, 2002, Vol.234 (1), p.63-69

2002

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Growth of SiC from a Liquid Phase at Low Temperature

Materials science forum, 2007-01, Vol.556-557, p.41-46

2007

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Structural properties of undoped and doped cubic GaN grown on SiC(001)

Journal of applied physics, 2002-04, Vol.91 (8), p.4983-4987

2002

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Ab Initio Study of the Lowest-Lying Electronic States of LuCl Molecules

Structural and optical study of BxInyGa1-x-yAs/GaAs and InyGa1-yAs/GaAs QW's grown by MOCVD

Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part I: Analysis of BAs thermodynamic properties

Clustering effects in optical properties of BGaAs/GaAs epilayers

Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)

AES, LEED and PYS investigation of Au deposits on InSe/Si(1 1 1) substrate

Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

Theoretical electronic investigation of the low-lying electronic states of the LuF molecule

Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part II: BGaAs alloy formation

Investigation by EELS and TRIM simulation method of the interaction of Ar + and N + ions with the InP compound

Study by EELS and EPES of the stability of InPO4/InP system

AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar + ions bombardment

Growth and characterization of high quality BxGa1-xAs/GaAs(0 0 1) epilayers

Low-temperature homoepitaxial growth of α-SiC on on-axis (0 0 0 1) substrate by vapor–liquid–solid mechanism

Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

Study of surface defects on 3C–SiC films grown on Si(1 1 1) by CVD

Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

Optical Investigation of Cubic SiC Layers Grown on Hexagonal SiC Substrates by CVD and VLS

Defect morphology and strain of CVD grown 3C-SiC layers: effect of the carbonization process

Vapour–liquid–solid mechanism for the growth of SiC homoepitaxial layers by VPE

Growth of SiC from a Liquid Phase at Low Temperature

Structural properties of undoped and doped cubic GaN grown on SiC(001)

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