UB Paderborn / Katalog / Suche / in CDI

Monolithic growth of ultrathin Ge nanowires on Si(001)

Physical review letters, 2012-08, Vol.109 (8), p.085502-085502, Article 085502

2012

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Crossover among structural motifs in transition and noble-metal clusters

The Journal of chemical physics, 2002-03, Vol.116 (9), p.3856-3863

2002

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Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Journal of applied physics, 2020-12, Vol.128 (21)

2020

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Anomalous smoothing preceding island formation during growth on patterned substrates

Physical review letters, 2012-10, Vol.109 (15), p.156101-156101, Article 156101

2012

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Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Advances in physics: X, 2016-05, Vol.1 (3), p.331-367

2016

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Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer

Physical review letters, 2012-02, Vol.108 (5), p.055503-055503, Article 055503

2012

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Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates

Physical review letters, 2009-01, Vol.102 (2), p.025502-025502, Article 025502

2009

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Fully coherent growth of Ge on free-standing Si(001) nanomesas

Physical review. B, Condensed matter and materials physics, 2014-01, Vol.89 (1), Article 014101

2014

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Self-assembled GaAs islands on Si by droplet epitaxy

Applied physics letters, 2010-08, Vol.97 (5), p.053101-053101-3

2010

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Jumps and concerted moves in Cu, Ag, and Au(110) adatom self-diffusion

Physical review. B, Condensed matter, 1999-02, Vol.59 (8), p.5881-5891

1999

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Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001)

Physical review letters, 2004-11, Vol.93 (21), p.216102.1-216102.4, Article 216102

2004

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Understanding the elastic relaxation mechanisms of strain in Ge islands on pit-patterned Si(001) substrates

Journal of physics. Condensed matter, 2008-11, Vol.20 (45), p.454217-454217 (4)

2008

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Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data

Journal of physics. Condensed matter, 2012-03, Vol.24 (10), p.104018-104018

2012

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Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates

Applied physics letters, 2011-07, Vol.99 (3), p.033106-033106-3

2011

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Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy

New journal of physics, 2008-08, Vol.10 (8), p.083039

2008

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Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning

Nanotechnology, 2016-10, Vol.27 (42), p.425301-425301

2016

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Density functional study of the decomposition pathways of SiH3 and GeH3 at the Si(100) and Ge(100) surfaces

Journal of physics. Condensed matter, 2012-03, Vol.24 (10), p.104002-104002

2012

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Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001)

Nanotechnology, 2011-07, Vol.22 (28), p.285704-285704

2011

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Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (11), Article 115309

2013

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Electronic and elastic contributions in the enhanced stability of Ge( [formula omitted]) under compressive strain

Surface science, 2004-05, Vol.556 (2), p.121-128

2004

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Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001)

Physical review letters, 2007-12, Vol.99 (23), p.235505-235505

2007

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Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing

Physical review letters, 2010-10, Vol.105 (16), p.166102-166102, Article 166102

2010

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A fast computational method for determining equilibrium concentration profiles in intermixed nanoislands

Journal of physics. Condensed matter, 2009-02, Vol.21 (8), p.084217-084217 (6)

2009

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Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Journal of applied physics, 2015-03, Vol.117 (10)

2015

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Monolithic growth of ultrathin Ge nanowires on Si(001)

Crossover among structural motifs in transition and noble-metal clusters

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Anomalous smoothing preceding island formation during growth on patterned substrates

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer

Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates

Fully coherent growth of Ge on free-standing Si(001) nanomesas

Self-assembled GaAs islands on Si by droplet epitaxy

Jumps and concerted moves in Cu, Ag, and Au(110) adatom self-diffusion

Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001)

Understanding the elastic relaxation mechanisms of strain in Ge islands on pit-patterned Si(001) substrates

Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data

Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking

Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si(001) substrates

Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy

Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning

Density functional study of the decomposition pathways of SiH3 and GeH3 at the Si(100) and Ge(100) surfaces

Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001)

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Electronic and elastic contributions in the enhanced stability of Ge( [formula omitted]) under compressive strain

Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001)

Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing

A fast computational method for determining equilibrium concentration profiles in intermixed nanoislands

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

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