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III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Applied physics letters, 2016-08, Vol.109 (9)

2016

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Correlation between physical, electrical, and optical properties of Cu2ZnSnSe4 based solar cells

Applied physics letters, 2013-01, Vol.102 (1)

2013

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Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET

Journal of applied physics, 2019-06, Vol.125 (24)

2019

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InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature

Applied physics letters, 2016-12, Vol.109 (24)

2016

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Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

Applied physics letters, 2016-10, Vol.109 (17)

2016

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III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.261-264

2022

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Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

Journal of physics. Conference series, 2019-05, Vol.1190 (1), p.12001

2019

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GaAs on Ge for CMOS

Thin solid films, 2008-11, Vol.517 (1), p.148-151

2008

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High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

IEEE journal of the Electron Devices Society, 2017-11, Vol.5 (6), p.480-484

2017

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Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells

Journal of crystal growth, 2007, Vol.298, p.758-761

2007

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Study towards integration of In0.53Ga0.47As on 300mm Si for CMOS sub-7nm node: Development of thin graded InxGa1−xAs buffers on GaAs

Journal of crystal growth, 2016-10, Vol.452, p.244-247

2016

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Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs

Journal of crystal growth, 2016-10, Vol.452, p.244-247

2016

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Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors

Journal of crystal growth, 2003, Vol.247 (3), p.237-244

2003

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III-V on a Si platform for the next generations of communication systems

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, p.250-252

2022

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From 5G to 6G: will compound semiconductors make the difference?

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-4

2020

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Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K

Semiconductor science and technology, 2016-10, Vol.31 (12)

2016

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A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

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Deep-Level Transient Spectroscopy of Ga As Nanoridge Diodes Grown on Si Substrates

Physical review applied, 2020-08, Vol.14 (2), Article 024093

2020

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High Mobility In 0.53 Ga 0.47 As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

IEEE journal of the Electron Devices Society, 2017-11, Vol.5 (6), p.480-484

2017

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Suitability of high-k gate oxides for III-V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3

2014 IEEE International Reliability Physics Symposium, 2014, p.6A.2.1-6A.2.6

2014

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Record mobility (μeff ∼3100 cm2/V-s) and reliability performance (Vov∼0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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In0.53Ga0.47As quantum-well MOSFET with source/drain regrowth for low power logic applications

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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The impact of the temperature on In0.53Ga0.47As nTFETs

Composants nanoélectroniques, 2018-02, Vol.18 (1)

2018

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Annual energy yield: A comparison between various monolithic and mechanically stacked multijunction solar cells

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.002092-002095

2012

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ESD characterization of planar InGaAs devices

2015 IEEE International Reliability Physics Symposium, 2015, p.3F.1.1-3F.1.7

2015

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III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Correlation between physical, electrical, and optical properties of Cu2ZnSnSe4 based solar cells

Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET

InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature

Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

GaAs on Ge for CMOS

High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells

Study towards integration of In0.53Ga0.47As on 300mm Si for CMOS sub-7nm node: Development of thin graded InxGa1−xAs buffers on GaAs

Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs

Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors

III-V on a Si platform for the next generations of communication systems

From 5G to 6G: will compound semiconductors make the difference?

Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies

Deep-Level Transient Spectroscopy of Ga As Nanoridge Diodes Grown on Si Substrates

High Mobility In 0.53 Ga 0.47 As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes

Suitability of high-k gate oxides for III-V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3

Record mobility (μeff ∼3100 cm2/V-s) and reliability performance (Vov∼0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

In0.53Ga0.47As quantum-well MOSFET with source/drain regrowth for low power logic applications

The impact of the temperature on In0.53Ga0.47As nTFETs

Annual energy yield: A comparison between various monolithic and mechanically stacked multijunction solar cells

ESD characterization of planar InGaAs devices

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