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Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors

IEEE transactions on applied superconductivity, 2009-06, Vol.19 (3), p.318-322

2009

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Growth of gallium nitride by hydride vapor-phase epitaxy

Journal of crystal growth, 1997-06, Vol.178 (1), p.147-156

1997

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GaN avalanche photodiodes operating in linear-gain mode and Geiger mode

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.502-511

2001

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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

Solid state communications, 2001-02, Vol.117 (10), p.571-575

2001

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GaN hot electron transistors: From ballistic to coherent

Solid-state electronics, 2023-10, Vol.208, p.108741, Article 108741

2023

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Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

Diamond and related materials, 2020-06, Vol.106, p.107819, Article 107819

2020

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Orthodox etching of HVPE-grown GaN

Journal of crystal growth, 2007-07, Vol.305 (2), p.384-392

2007

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Defect Donor and Acceptor in GaN

Physical review letters, 1997-09, Vol.79 (12), p.2273-2276

1997

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Bulk GaN crystal growth by the high-pressure ammonothermal method

Journal of crystal growth, 2007-03, Vol.300 (1), p.11-16

2007

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Low-energy electron-excited nanoluminescence studies of GaN and related materials

Applied surface science, 2002-05, Vol.190 (1), p.498-507

2002

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Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures

Applied physics letters, 2004-09, Vol.85 (10), p.1722-1724

2004

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Pressure Induced Deep Gap State of Oxygen in GaN

Physical review letters, 1997-05, Vol.78 (20), p.3923-3926

1997

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Growth of GaN by ECR-assisted MBE

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.36-49

1993

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Thickness Dependence of Electronic Properties of GaN Epi-layers

MRS proceedings, 1996, Vol.449, Article 525

1996

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Orthodox etching of HVPE-grown GaN

Journal of crystal growth, 2006-08, Vol.305

2006

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Strongly localized excitons in gallium nitride

Applied physics letters, 1996-04, Vol.68 (18), p.2556-2558

1996

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Electron mobility exceeding 160 000 cm{sup 2}/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy

Applied physics letters, 2004-11, Vol.85 (22)

2004

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Unusual luminescence lines in GaN

Journal of applied physics, 2004-07, Vol.94 (9)

2004

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Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-11, Vol.22 (6), p.2284-2289

2004

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Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.39-48

2002

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Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

Applied physics letters, 2001-04, Vol.78 (3)

2001

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Temperature dependence of the breakdown voltage for reverse-biased GaN p–n–n + diodes

Solid state communications, 2001-01, Vol.117 (9), p.549-553

2001

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Nitride-based UV Geiger-Mode Avalanche Photodiodes

2005 International Semiconductor Device Research Symposium, 2005, p.219-219

Molnar, R.J.

2005

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Electronic Defect States Observed by Cathodoluminescence Spectroscopy at GaN/Sapphire Interfaces

Physica status solidi. B. Basic research, 2001-11, Vol.228 (2), p.441-444

2001

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Electron beam and optical depth-profiling of quasi-bulk GaN

Applied physics letters, 2000-11, Vol.77 (17)

2000

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Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors

Growth of gallium nitride by hydride vapor-phase epitaxy

GaN avalanche photodiodes operating in linear-gain mode and Geiger mode

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

GaN hot electron transistors: From ballistic to coherent

Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

Orthodox etching of HVPE-grown GaN

Defect Donor and Acceptor in GaN

Bulk GaN crystal growth by the high-pressure ammonothermal method

Low-energy electron-excited nanoluminescence studies of GaN and related materials

Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures

Pressure Induced Deep Gap State of Oxygen in GaN

Growth of GaN by ECR-assisted MBE

Thickness Dependence of Electronic Properties of GaN Epi-layers

Orthodox etching of HVPE-grown GaN

Strongly localized excitons in gallium nitride

Electron mobility exceeding 160 000 cm{sup 2}/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy

Unusual luminescence lines in GaN

Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

Temperature dependence of the breakdown voltage for reverse-biased GaN p–n–n + diodes

Nitride-based UV Geiger-Mode Avalanche Photodiodes

Electronic Defect States Observed by Cathodoluminescence Spectroscopy at GaN/Sapphire Interfaces

Electron beam and optical depth-profiling of quasi-bulk GaN

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