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UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3768-3774

2014

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PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

Optics letters, 2015-02, Vol.40 (3), p.300-303

2015

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Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO2 surfaces

Microelectronic engineering, 2014-08, Vol.125, p.45-50

2014

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Comprehensive model of damage accumulation in silicon

Journal of applied physics, 2008-01, Vol.103 (1), p.014911-014911-7

2008

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The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.43-48

2008

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Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing

Journal of the Electrochemical Society, 2008, Vol.155 (2), p.H69

2008

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TCAD modeling and simulation of boron deactivation in NMOS carbon-implanted channel

Solid-state electronics, 2009-06, Vol.53 (6), p.658-662

2009

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Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.14-19

2008

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Ultra-Shallow Junction Formation-Physics and Advanced Technology

Ion Implantation Technology 2008, 2008, Vol.1066, p.11-18

2008

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Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

Solid-state electronics, 2015-09, Vol.111, p.210-217

2015

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PureB single-photon avalanche diodes for low-energy electron detection down to 200eV

Optics letters, 2015-02, Vol.40 (3), p.300-303

2015

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An Extensive Study on the Boron Junctions Formed by Optimized Pre-Spike/Multiple-Pulse Flash Lamp Annealing Schemes: Junction Formation, Stability and Leakage

Ion Implantation Technology 2008, 2008, Vol.1066, p.47-50

2008

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Effects of Annealing on Chemical-Vapor Deposited PureB Layers

ECS journal of solid state science and technology, 2013-01, Vol.2 (9), p.P413-P417

2013

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UV-sensitive low dark-count PureB single-photon avalanche diode

2013 IEEE SENSORS, 2013, p.1-4

2013

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(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

ECS transactions, 2012, Vol.49 (1), p.25-33

2012

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Boron-Doped Silicon Surfaces From B H Passivated by ALD Al O for Solar Cells

IEEE journal of photovoltaics, 2015-09, Vol.5 (5), p.1310-1318

2015

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Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2155-2163

2007

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Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO sub(2) surfaces

Microelectronic engineering, 2014-08, Vol.125, p.45-50

2014

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Chemical vapor deposition of PureB layers for solar cell application

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2234-2238

2013

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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Journal of applied physics, 2005-08, Vol.98 (4), p.046104-046104-3

2005

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Understanding of Boron Junction Stability in Preamorphized Silicon after Optimized Flash Annealing

Journal of the Electrochemical Society, 2008, Vol.155 (7), p.H508

2008

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Physically based modeling of dislocation loops in ion implantation processing in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.404-408

2005

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Comprehensive modeling of ion-implant amorphization in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.383-385

2005

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Predictive simulation of advanced nano-CMOS devices based on kMC process simulation : Simulation and modeling of nanoelectronics devices

IEEE transactions on electron devices, 2007, Vol.54 (9), p.2155-2163

2007

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Bimodal distribution of damage morphology generated by ion implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.389-391

2005

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UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO2 surfaces

Comprehensive model of damage accumulation in silicon

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing

TCAD modeling and simulation of boron deactivation in NMOS carbon-implanted channel

Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

Ultra-Shallow Junction Formation-Physics and Advanced Technology

Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes

PureB single-photon avalanche diodes for low-energy electron detection down to 200eV

An Extensive Study on the Boron Junctions Formed by Optimized Pre-Spike/Multiple-Pulse Flash Lamp Annealing Schemes: Junction Formation, Stability and Leakage

Effects of Annealing on Chemical-Vapor Deposited PureB Layers

UV-sensitive low dark-count PureB single-photon avalanche diode

(Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

Boron-Doped Silicon Surfaces From B H Passivated by ALD Al O for Solar Cells

Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO sub(2) surfaces

Chemical vapor deposition of PureB layers for solar cell application

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Understanding of Boron Junction Stability in Preamorphized Silicon after Optimized Flash Annealing

Physically based modeling of dislocation loops in ion implantation processing in silicon

Comprehensive modeling of ion-implant amorphization in silicon

Predictive simulation of advanced nano-CMOS devices based on kMC process simulation : Simulation and modeling of nanoelectronics devices

Bimodal distribution of damage morphology generated by ion implantation

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