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Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Journal of applied physics, 2013-01, Vol.113 (2)

2013

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Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.902-908

2012

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Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

IEEE electron device letters, 2012-11, Vol.33 (11), p.1568-1570

2012

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Exploration of vertical MOSFET and tunnel FET device architecture for Sub 10nm node applications

70th Device Research Conference, 2012, p.233-234

2012

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Low Power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs

68th Device Research Conference, 2010, p.101-102

2010

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Sub-micron InGaAs Esaki diodes with record high peak current density

68th Device Research Conference, 2010, p.163-164

2010

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Tunnel transistors for energy efficient computing

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.6A.3.1-6A.3.7

2013

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Tunnel Transistors for Low Power Logic

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013, p.1-4

2013

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Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

2012 Symposium on VLSI Technology (VLSIT), 2012, p.53-54

2012

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Flicker noise characterization and analytical modeling of homo and hetero-junction III-V tunnel FETs

70th Device Research Conference, 2012, p.203-204

2012

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Self-aligned gate nanopillar In0.53Ga0.47As vertical tunnel transistor

69th Device Research Conference, 2011, p.203-204

2011

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Experimental demonstration of "Cold" low contact resistivity ohmic contacts on moderately doped n-Ge with in-situ atomic hydrogen clean

70th Device Research Conference, 2012, p.101-102

2012

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Complete band alignment determination of InAs-GaSb broken-gap tunneling field-effect transistor hetero-junction

71st Device Research Conference, 2013, Vol.Supplement, p.1-2

2013

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Implications of record peak current density In0.53Ga0.47As Esaki tunnel diode on Tunnel FET logic applications

68th Device Research Conference, 2010, p.103-104

2010

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Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

2011 International Electron Devices Meeting, 2011, p.33.5.1-33.5.4

2011

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Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-3

2009

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Demonstration of In sub(0.9)Ga sub(0.1)As/GaAs sub(0.18)Sb sub(0.82) near broken-gap tunnel FET with I sub(ON)=740 mu A/ mu m, G sub(M)=70 mu S/ mu m and gigahertz switching performance at V sub(Ds)=0.5V

Technical digest - International Electron Devices Meeting, 2013-12, p.28.2.1-28.2.4

2013

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Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

2013 IEEE International Electron Devices Meeting, 2013, p.28.2.1-28.2.4

2013

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Post-acute COVID-19 outcomes including participant-reported long COVID: amubarvimab/romlusevimab versus placebo in the ACTIV-2 trial

EClinicalMedicine, 2024-09, Vol.75, p.102787, Article 102787

2024

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Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors

Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

Exploration of vertical MOSFET and tunnel FET device architecture for Sub 10nm node applications

Low Power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs

Sub-micron InGaAs Esaki diodes with record high peak current density

Tunnel transistors for energy efficient computing

Tunnel Transistors for Low Power Logic

Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

Flicker noise characterization and analytical modeling of homo and hetero-junction III-V tunnel FETs

Self-aligned gate nanopillar In0.53Ga0.47As vertical tunnel transistor

Experimental demonstration of "Cold" low contact resistivity ohmic contacts on moderately doped n-Ge with in-situ atomic hydrogen clean

Complete band alignment determination of InAs-GaSb broken-gap tunneling field-effect transistor hetero-junction

Implications of record peak current density In0.53Ga0.47As Esaki tunnel diode on Tunnel FET logic applications

Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications

Demonstration of In sub(0.9)Ga sub(0.1)As/GaAs sub(0.18)Sb sub(0.82) near broken-gap tunnel FET with I sub(ON)=740 mu A/ mu m, G sub(M)=70 mu S/ mu m and gigahertz switching performance at V sub(Ds)=0.5V

Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

Post-acute COVID-19 outcomes including participant-reported long COVID: amubarvimab/romlusevimab versus placebo in the ACTIV-2 trial

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