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The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications

Journal of computational electronics, 2022-02, Vol.21 (1), p.169-180

2022

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Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

International journal of numerical modelling, 2019-09, Vol.32 (5), p.n/a

2019

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Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

Journal of electronic materials, 2020, Vol.49 (1), p.524-529

2020

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Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

International journal of electronics, 2018-03, Vol.105 (3), p.446-456

2018

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Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices

Solid-state electronics, 2014-01, Vol.91, p.44-52

2014

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Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit

International journal of numerical modelling, 2018-05, Vol.31 (3), p.n/a

2018

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In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications

Journal of computational electronics, 2017-09, Vol.16 (3), p.732-740

2017

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Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Journal of science. Advanced materials and devices, 2020-06, Vol.5 (2), p.192-198

2020

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Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

Journal of electronic materials, 2024-07

2024

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Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures

Advanced Materials Research, 2015-05, Vol.1105, p.99-104

2015

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Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits

Materials science in semiconductor processing, 2019-11, Vol.103, p.104624, Article 104624

2019

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Performance Analysis of FinFET based Ternary Inverter

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO), 2022, p.1-6

2022

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Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

Physica. E, Low-dimensional systems & nanostructures, 2017-08, Vol.92, p.23-29

2017

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hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$ In 0.7 Ga 0.3 As / InAs / In 0.7 Ga 0.3 As composite-channel double-gate (DG)-HEMT devices for high-frequency applications

Journal of computational electronics, 2017-09, Vol.16 (3), p.732-740

2017

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Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices

Superlattices and microstructures, 2013-12, Vol.64, p.470-482

2013

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High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study

Microelectronics, 2023-10, Vol.140, p.105946, Article 105946

2023

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Multi-Modal Image Fusion Techniques to Detect Brain Tumor Using YOLO Technology

2023 4th IEEE Global Conference for Advancement in Technology (GCAT), 2023, p.1-7

2023

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Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

Superlattices and microstructures, 2017-12, Vol.112, p.604-618

2017

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Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

Superlattices and microstructures, 2017-03, Vol.103, p.270-284

2017

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Recessed Mg-doped P-type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications

2016 International Conference on Inventive Computation Technologies (ICICT), 2016, Vol.1, p.1-4

2016

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Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices

2017 Devices for Integrated Circuit (DevIC), 2017, p.702-707

2017

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Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)

2017 Devices for Integrated Circuit (DevIC), 2017, p.699-701

2017

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Analysis of noise performance in InAs DG-MOSHEMT

2017 Devices for Integrated Circuit (DevIC), 2017, p.695-698

2017

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DC, RF and noise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT

2017 Devices for Integrated Circuit (DevIC), 2017, p.708-710

2017

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Integrated TSVM-TSK fusion for enhanced EEG-based epileptic seizure detection: Robust classifier with competitive learning

Biomedical signal processing and control, 2024-10, Vol.96, p.106440, Article 106440

2024

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The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices

Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit

In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures

Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits

Performance Analysis of FinFET based Ternary Inverter

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$ In 0.7 Ga 0.3 As / InAs / In 0.7 Ga 0.3 As composite-channel double-gate (DG)-HEMT devices for high-frequency applications

Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices

High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study

Multi-Modal Image Fusion Techniques to Detect Brain Tumor Using YOLO Technology

Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

Recessed Mg-doped P-type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications

Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices

Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)

Analysis of noise performance in InAs DG-MOSHEMT

DC, RF and noise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT

Integrated TSVM-TSK fusion for enhanced EEG-based epileptic seizure detection: Robust classifier with competitive learning

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