UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A sub-thermionic MoS2 FET with tunable transport

Applied physics letters, 2017-10, Vol.111 (16)

2017

Volltextzugriff (PDF)

Performance and Reliability of TiO2/ZrO2/TiO2 (TZT) and AlO-Doped TZT MIM Capacitors

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3928-3935

2016

Volltextzugriff (PDF)

Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3711-3718

2018

Volltextzugriff (PDF)

Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors

Journal of physics. D, Applied physics, 2021-11, Vol.54 (44)

2021

Volltextzugriff (PDF)

Optimization and integration of ultrathin e-beam grown HfO 2 gate dielectrics in MoS 2 transistors

Journal of physics. D, Applied physics, 2021-11, Vol.54 (44), p.445302

2021

Volltextzugriff (PDF)

New insights into microstructural evolution of epitaxial Ni-Mn-Ga films on MgO (1 0 0) substrate by high-resolution X-ray diffraction and orientation imaging investigations

Philosophical magazine (Abingdon, England), 2018-04, Vol.98 (10), p.819-847

2018

Volltextzugriff (PDF)

Structural transformations in highly oriented seven modulated martensite Ni–Mn–Ga thin films on an Al2O3(112¯0) substrate

Journal of materials research, 2016-10, Vol.31 (19), p.3016-3026

2016

Volltextzugriff (PDF)

High-Performance HfO2 Back Gated Multilayer MoS2 Transistors

IEEE electron device letters, 2016-06, Vol.37 (6), p.797-800

2016

Volltextzugriff (PDF)

Chiro-plasmonic refractory metamaterial with titanium nitride (TiN) core-shell nanohelices

Nanotechnology, 2018-06, Vol.29 (25), p.255203-255203

2018

Volltextzugriff (PDF)

Structural transformations in highly oriented seven modulated martensite Ni–Mn–Ga thin films on an Al 2 O 3 substrate

Journal of materials research, 2016-10, Vol.31 (19), p.3016-3026

2016

Volltextzugriff (PDF)

Structural transformations in highly oriented seven modulated martensite Ni–Mn–Ga thin films on an Al2O3 $\left( {11\bar 20} \right)$ substrate

Journal of materials research, 2016-10, Vol.31 (19), p.3016-3026

2016

Volltextzugriff (PDF)

Optimization of HfO2 films for high transconductance back gated graphene transistors

Applied physics letters, 2013-08, Vol.103 (7)

2013

Volltextzugriff (PDF)

Performance and Reliability of TiO 2 /ZrO 2 /TiO 2 (TZT) and AlO-Doped TZT MIM Capacitors

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3928-3935

2016

Volltextzugriff (PDF)

Performance and Reliability of Gd2O3 and Stacked Gd2O3-Eu2O3 Metal-Insulator-Metal Capacitors

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1523-1528

2013

Volltextzugriff (PDF)

Performance and Reliability of and Stacked \hbox Metal-Insulator-Metal Capacitors

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1523-1528

2013

Volltextzugriff (PDF)

Influence of O 2 flow rate on HfO 2 gate dielectrics for back-gated graphene transistors

Semiconductor science and technology, 2014-05, Vol.29 (5), p.55007

2014

Volltextzugriff (PDF)

Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

Semiconductor science and technology, 2014-04, Vol.29 (5)

2014

Volltextzugriff (PDF)

Adaptive Transport in High Performance ( I on ), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS 2 Transistors

IEEE transactions on nanotechnology, 2019, Vol.18, p.1071-1078

2019

Volltextzugriff (PDF)

Adaptive Transport in High Performance (Ion), Steep Sub-Threshold Slope (SS 2 Transistors

IEEE transactions on nanotechnology, 2019, Vol.18, p.1071-1078

2019

Volltextzugriff (PDF)

Adaptive Transport in High Performance ( I on), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS2 Transistors

IEEE transactions on nanotechnology, 2019-01, Vol.18, p.1071

2019

Volltextzugriff (PDF)

Probing defect states in few-layer MoS2 by conductance fluctuation spectroscopy

Physical review. B, 2019-06, Vol.99 (24), p.1

2019

Volltextzugriff (PDF)

Dielectric Engineering of HfO 2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3711-3718

2018

Volltextzugriff (PDF)

(Invited) Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS 2 FETs

ECS transactions, 2017-08, Vol.80 (1), p.101-107

2017

Volltextzugriff (PDF)

Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2

Advanced electronic materials, 2019-06, Vol.5 (6), p.n/a

2019

Volltextzugriff (PDF)

Probing defect states in few-layer MoS 2 by conductance fluctuation spectroscopy

Physical review. B, 2019-06, Vol.99 (24), Article 245419

2019

Volltextzugriff (PDF)

1 – 25 von 30

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(28)
Mit Volltextzugriff
(28)

Publikationsform

Artikel
(30)

Sprache

Englisch
(30)

Erscheinungsjahr

n.n

Thema

Science & Technology
(14)
Physical Sciences
(13)
Physics
(13)
Physics, Applied
(12)
Technology
(11)
Materials Science
(8)
Materials Science, Multidisciplinary
(7)
Engineering
(6)
Engineering, Electrical & Electronic
(6)
Nanoscience & Nanotechnology
(4)
Science & Technology - Other Topics
(4)
Constant Voltage Stress
(3)
Hfo
(3)
Logic Gates
(3)
Molybdenum Disulfide
(3)
Physics, Condensed Matter
(3)
Reliability
(3)
2d Materials
(2)
Capacitance
(2)
Capacitors
(2)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

A sub-thermionic MoS2 FET with tunable transport

Performance and Reliability of TiO2/ZrO2/TiO2 (TZT) and AlO-Doped TZT MIM Capacitors

Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors

Optimization and integration of ultrathin e-beam grown HfO 2 gate dielectrics in MoS 2 transistors

New insights into microstructural evolution of epitaxial Ni-Mn-Ga films on MgO (1 0 0) substrate by high-resolution X-ray diffraction and orientation imaging investigations

Structural transformations in highly oriented seven modulated martensite Ni–Mn–Ga thin films on an Al2O3(112¯0) substrate

High-Performance HfO2 Back Gated Multilayer MoS2 Transistors

Chiro-plasmonic refractory metamaterial with titanium nitride (TiN) core-shell nanohelices

Structural transformations in highly oriented seven modulated martensite Ni–Mn–Ga thin films on an Al 2 O 3 substrate

Structural transformations in highly oriented seven modulated martensite Ni–Mn–Ga thin films on an Al2O3 $\left( {11\bar 20} \right)$ substrate

Optimization of HfO2 films for high transconductance back gated graphene transistors

Performance and Reliability of TiO 2 /ZrO 2 /TiO 2 (TZT) and AlO-Doped TZT MIM Capacitors

Performance and Reliability of Gd2O3 and Stacked Gd2O3-Eu2O3 Metal-Insulator-Metal Capacitors

Performance and Reliability of and Stacked \hbox Metal-Insulator-Metal Capacitors

Influence of O 2 flow rate on HfO 2 gate dielectrics for back-gated graphene transistors

Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

Adaptive Transport in High Performance ( I on ), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS 2 Transistors

Adaptive Transport in High Performance (Ion), Steep Sub-Threshold Slope (SS 2 Transistors

Adaptive Transport in High Performance ( I on), Steep Sub-Threshold Slope (SS < 60 mV/dec) MoS2 Transistors

Probing defect states in few-layer MoS2 by conductance fluctuation spectroscopy

Dielectric Engineering of HfO 2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

(Invited) Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS 2 FETs

Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2

Probing defect states in few-layer MoS 2 by conductance fluctuation spectroscopy

Suchergebnisse filtern