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Systemic lidocaine fails to improve postoperative morphine consumption, postoperative recovery and quality of life in patients undergoing posterior spinal arthrodesis. A double-blind, randomized, placebo-controlled trial

British journal of anaesthesia : BJA, 2017-04, Vol.118 (4), p.576-585

2017

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Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3734-3739

2017

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Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

Applied physics letters, 2019-07, Vol.115 (5)

2019

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Impact of four different recumbencies on the distribution of ventilation in conscious or anaesthetized spontaneously breathing beagle dogs: An electrical impedance tomography study

PloS one, 2017-09, Vol.12 (9), p.e0183340-e0183340

2017

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Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Journal of applied physics, 2021-10, Vol.130 (14)

2021

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Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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miRNA and piRNA localization in the male mammalian meiotic nucleus

Chromosome research, 2008-04, Vol.16 (2), p.243-260

2008

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The effect of four anaesthetic protocols for maintenance of anaesthesia on trans-diaphragmatic pressure in dogs

PloS one, 2013-10, Vol.8 (10), p.e75341-e75341

2013

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The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.372-377

2019

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A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.78-81

2020

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On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

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On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.37-40

2015

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Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-5

2024

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GaN PMIC Opportunities: Characterization of Analog and Digital Building Blocks in a 650V GaN-on-Si Platform

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Green fluorescent protein expression triggers proteome changes in breast cancer cells

Experimental cell research, 2014-01, Vol.320 (1), p.33-45

2014

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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.374-377

2014

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Low PIP2 molar fractions induce nanometer size clustering in giant unilamellar vesicles

Chemistry and physics of lipids, 2014-01, Vol.177, p.51-63

2014

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Hot-carrier degradation phenomena in lateral and vertical DMOS transistors

IEEE transactions on electron devices, 2004-04, Vol.51 (4), p.623-628

2004

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Transient Overvoltage Detection Technique for GaN HEMTs Integrated in a 200-V GaN-on-SOI Process

2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 2022, p.1400-1405

2022

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Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.P54.SiC-1-P54.SiC-4

2024

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Sex-specific crossover patterns in Zebrafish ( )

Heredity, 2008-05, Vol.100 (5), p.489-495

2008

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Monitoring changes in distribution of pulmonary ventilation by functional electrical impedance tomography in anaesthetized ponies

Veterinary anaesthesia and analgesia, 2019-03, Vol.46 (2), p.200-208

2019

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Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.26-29

2020

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AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.455-458

2016

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The time course and chromosomal localization of recombination-related proteins at meiosis in the mouse are compatible with models that can resolve the early DNA-DNA interactions without reciprocal recombination

Journal of cell science, 2002-04, Vol.115 (Pt 8), p.1611-1622

2002

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Systemic lidocaine fails to improve postoperative morphine consumption, postoperative recovery and quality of life in patients undergoing posterior spinal arthrodesis. A double-blind, randomized, placebo-controlled trial

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

Impact of four different recumbencies on the distribution of ventilation in conscious or anaesthetized spontaneously breathing beagle dogs: An electrical impedance tomography study

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

miRNA and piRNA localization in the male mammalian meiotic nucleus

The effect of four anaesthetic protocols for maintenance of anaesthesia on trans-diaphragmatic pressure in dogs

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements

GaN PMIC Opportunities: Characterization of Analog and Digital Building Blocks in a 650V GaN-on-Si Platform

Green fluorescent protein expression triggers proteome changes in breast cancer cells

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

Low PIP2 molar fractions induce nanometer size clustering in giant unilamellar vesicles

Hot-carrier degradation phenomena in lateral and vertical DMOS transistors

Transient Overvoltage Detection Technique for GaN HEMTs Integrated in a 200-V GaN-on-SOI Process

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress

Sex-specific crossover patterns in Zebrafish ( )

Monitoring changes in distribution of pulmonary ventilation by functional electrical impedance tomography in anaesthetized ponies

Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

The time course and chromosomal localization of recombination-related proteins at meiosis in the mouse are compatible with models that can resolve the early DNA-DNA interactions without reciprocal recombination

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