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Intelligent multimedia surveillance system for safer cities

APSIPA transactions on signal and information processing, 2016, Vol.5 (1)

2016

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Optical Recombination Processes in High-Quality GaN Films and InGaN Quantum Wells Grown on Facet-Initiated Epitaxial Lateral Overgrown GaN Substrates

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2402-2406

2000

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Effects of thermal annealing on porous silicon photoluminescence dynamics

Applied physics letters, 1992-08, Vol.61 (8), p.940-942

1992

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AI and IoT for Social Value Creation

2019 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2019, p.99-102

Mochizuki, Yasunori

2019

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Recombination processes in anodized porous-Si as studied by optically-detected magnetic resonance

Japanese Journal of Applied Physics, 1993-10, Vol.32 (10A), p.L1387-L1390

1993

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Role of dangling bond centers on radiative recombination processes in porous silicon

Applied physics letters, 1995-09, Vol.67 (10), p.1396-1398

1995

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Identification of the EL2 family midgap levels in GaAs

Japanese Journal of Applied Physics, 1985-12, Vol.24 (12), p.L935-L937

1985

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Role of minority-carrier diffusion in photoreflectance measurements of epitaxial GaAs wafers

Japanese Journal of Applied Physics, 1995, Vol.34 (11), p.6106-6111

1995

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New mechanism of exciton recombination in GaP : exciton bound to neutral donor and neutral acceptor pair

Japanese Journal of Applied Physics, 1990-06, Vol.29 (6), p.L971-L974

1990

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Optical recovery of photoquenching at the midgap electron traps (EL2 family) in GaAs

Japanese Journal of Applied Physics, 1985-01, Vol.24 (11), p.L895-L898

1985

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Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Journal of crystal growth, 1998-06, Vol.189-190, p.551-555

1998

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Electroreflectance investigation of trapping states at SiO 2/GaAs interfaces

Applied surface science, 1997-06, Vol.117, p.614-618

1997

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Sequential lattice relaxation model within the double configuration coordinate for the DX center in AlGaAs

Japanese Journal of Applied Physics, 1990-04, Vol.29 (4), p.L530-L533

1990

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Novel process for visible light emission from Si prepared by ion irradiation

Japanese Journal of Applied Physics, 1992-05, Vol.31 (5A), p.L560-L563

1992

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Electrical and Optical Study of Charge Traps at Passivated GaAs Surfaces

MRS proceedings, 1999, Vol.573, Article 107

Mochizuki, Yasunori

1999

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Proceedings of the Fifth International Symposium on Control of Semiconductor Interfaces

Applied surface science, 2008, Vol.254 (19)

2008

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Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments

Japanese Journal of Applied Physics, 1990-02, Vol.29 (2A), p.L364

1990

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Real-time electron-ion dynamics for photoinduced reactivation of hydrogen-passivated donors in GaAs

Applied physics letters, 1999-11, Vol.75 (19), p.2915-2917

1999

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The role of gallium antisite defect in activation and type-conversion in Si implanted GaAs

Japanese Journal of Applied Physics, 1985-12, Vol.24 (12), p.L921-L924

1985

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Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs

Japanese Journal of Applied Physics, 1986-10, Vol.25 (10A), p.L830

1986

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Interface-state density at SiO2/GaAs assessed by direct measurement of surface band bending

Applied physics letters, 1996-11, Vol.69 (20), p.3051-3053

1996

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Smart city and ICT infrastructure with vehicle to X applications toward urban decarbonization

Urban Systems Design, 2020

2020

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Electroreflectance investigation of trapping states at SiO2/GaAs interfaces

Applied surface science, 1997-06, Vol.117-118, p.614-618

1997

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Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si

Materials science forum, 1993-10, Vol.143-147, p.1469-1474

1993

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First-principles dynamics of defect reactions triggered by electronic excitation

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.991-994

1999

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Intelligent multimedia surveillance system for safer cities

Optical Recombination Processes in High-Quality GaN Films and InGaN Quantum Wells Grown on Facet-Initiated Epitaxial Lateral Overgrown GaN Substrates

Effects of thermal annealing on porous silicon photoluminescence dynamics

AI and IoT for Social Value Creation

Recombination processes in anodized porous-Si as studied by optically-detected magnetic resonance

Role of dangling bond centers on radiative recombination processes in porous silicon

Identification of the EL2 family midgap levels in GaAs

Role of minority-carrier diffusion in photoreflectance measurements of epitaxial GaAs wafers

New mechanism of exciton recombination in GaP : exciton bound to neutral donor and neutral acceptor pair

Optical recovery of photoquenching at the midgap electron traps (EL2 family) in GaAs

Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Electroreflectance investigation of trapping states at SiO 2/GaAs interfaces

Sequential lattice relaxation model within the double configuration coordinate for the DX center in AlGaAs

Novel process for visible light emission from Si prepared by ion irradiation

Electrical and Optical Study of Charge Traps at Passivated GaAs Surfaces

Proceedings of the Fifth International Symposium on Control of Semiconductor Interfaces

Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments

Real-time electron-ion dynamics for photoinduced reactivation of hydrogen-passivated donors in GaAs

The role of gallium antisite defect in activation and type-conversion in Si implanted GaAs

Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs

Interface-state density at SiO2/GaAs assessed by direct measurement of surface band bending

Smart city and ICT infrastructure with vehicle to X applications toward urban decarbonization

Electroreflectance investigation of trapping states at SiO2/GaAs interfaces

Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si

First-principles dynamics of defect reactions triggered by electronic excitation

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