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Harnessing allogeneic CD4+ T cells to reinvigorate host endogenous antitumor immunity

FUKUSHIMA JOURNAL OF MEDICAL SCIENCE, 2023, Vol.69(3), pp.157-165

Mochizuki, Kazuhiro

2023

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Effects of second transplantation with T-cell-replete haploidentical graft using low-dose anti-thymocyte globulin on long-term overall survival in pediatric patients with relapse of leukemia after first allogeneic transplantation

International journal of hematology, 2022-03, Vol.115 (3), p.414-423

2022

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The Notch Ligand DLL4 Defines a Capability of Human Dendritic Cells in Regulating Th1 and Th17 Differentiation

The Journal of immunology (1950), 2016-02, Vol.196 (3), p.1070-1080

2016

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Decline of serum albumin precedes severe acute GVHD after haploidentical HSCT

Pediatrics international, 2021-09, Vol.63 (9), p.1048-1054

2021

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Alloantigen-activated (AAA) CD4 + T cells reinvigorate host endogenous T cell immunity to eliminate pre-established tumors in mice

Journal of experimental & clinical cancer research, 2021-10, Vol.40 (1), p.314-314, Article 314

2021

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Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.39-42

2019

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Gibbs-Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

Japanese Journal of Applied Physics, 2019-05, Vol.58 (5), p.51009

2019

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Harnessing allogeneic CD4+ T cells to reinvigorate host endogenous antitumor immunity

FUKUSHIMA JOURNAL OF MEDICAL SCIENCE, 2023, pp.23-00001

Mochizuki, Kazuhiro

2023

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T-cell-replete haploidentical stem cell transplantation using low-dose antithymocyte globulin in children with relapsed or refractory acute leukemia

International journal of hematology, 2018-07, Vol.108 (1), p.76-84

2018

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Pre‐emptive rituximab for Epstein–Barr virus reactivation after haplo‐hematopoietic stem cell transplantation

Pediatrics international, 2017-09, Vol.59 (9), p.973-978

2017

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Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.470-475

2019

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Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CR05

2017

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Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.np-n/a

Mochizuki, Kazuhiro

2017

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Analyzing charge distribution in the termination area of 4H-SiC diodes by measuring depletion-layer capacitance

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Intracranial Hemorrhage in a Pediatric Patient with Chronic Myeloid Leukemia in Chronic Phase: A Case Report

Case reports in oncology, 2021-01, Vol.14 (1), p.525-530

2021

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Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

Japanese Journal of Applied Physics, 2023-12, Vol.62 (12), p.128003

2023

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T‐cell replete haploidentical stem cell transplantation with low dose anti‐thymocyte globulin for relapsed/refractory Ewing sarcoma family tumors

Cancer reports, 2022-07, Vol.5 (7), p.e1519-n/a

2022

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Optimal timing of apheresis for the efficient mobilization of peripheral blood progenitor cells recruited by high-dose granulocyte colony-stimulating factor in healthy donors

Transfusion and apheresis science, 2020-06, Vol.59 (3), p.102737-102737, Article 102737

2020

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Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1979-1985

2011

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Effectiveness of T-Cell Replete Haploidentical Hematopoietic Stem Cell Transplantation for Refractory/Relapsed B Cell Acute Lymphoblastic Leukemia in Children and Adolescents

Frontiers in pediatrics, 2021-10, Vol.9, p.743294-743294

2021

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Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock

Japanese Journal of Applied Physics, 2022-11, Vol.61 (11), p.118002

2022

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Analysis of relaxation time for nitrogen-containing species to enter steps on misoriented (0001) surfaces during homoepitaxial growth of 4H-SiC

Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.78003

2022

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Optical-Thermo-Transition Model of Reduction in On-Resistance of Small GaN p--n Diodes

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN10-08JN10-4

2013

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Long-term remission of HSCT-related NS after a second allogenic stem cell transplant

Pediatric nephrology (Berlin, West), 2016-04, Vol.31 (4), p.679-682

2016

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Harnessing allogeneic CD4+ T cells to reinvigorate host endogenous antitumor immunity

Effects of second transplantation with T-cell-replete haploidentical graft using low-dose anti-thymocyte globulin on long-term overall survival in pediatric patients with relapse of leukemia after first allogeneic transplantation

The Notch Ligand DLL4 Defines a Capability of Human Dendritic Cells in Regulating Th1 and Th17 Differentiation

Decline of serum albumin precedes severe acute GVHD after haploidentical HSCT

Alloantigen-activated (AAA) CD4 + T cells reinvigorate host endogenous T cell immunity to eliminate pre-established tumors in mice

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

Gibbs-Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

Harnessing allogeneic CD4+ T cells to reinvigorate host endogenous antitumor immunity

T-cell-replete haploidentical stem cell transplantation using low-dose antithymocyte globulin in children with relapsed or refractory acute leukemia

Pre‐emptive rituximab for Epstein–Barr virus reactivation after haplo‐hematopoietic stem cell transplantation

Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Analyzing charge distribution in the termination area of 4H-SiC diodes by measuring depletion-layer capacitance

Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates

Intracranial Hemorrhage in a Pediatric Patient with Chronic Myeloid Leukemia in Chronic Phase: A Case Report

Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

T‐cell replete haploidentical stem cell transplantation with low dose anti‐thymocyte globulin for relapsed/refractory Ewing sarcoma family tumors

Optimal timing of apheresis for the efficient mobilization of peripheral blood progenitor cells recruited by high-dose granulocyte colony-stimulating factor in healthy donors

Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates

Effectiveness of T-Cell Replete Haploidentical Hematopoietic Stem Cell Transplantation for Refractory/Relapsed B Cell Acute Lymphoblastic Leukemia in Children and Adolescents

Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock

Analysis of relaxation time for nitrogen-containing species to enter steps on misoriented (0001) surfaces during homoepitaxial growth of 4H-SiC

Optical-Thermo-Transition Model of Reduction in On-Resistance of Small GaN p--n Diodes

Long-term remission of HSCT-related NS after a second allogenic stem cell transplant

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