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Study of MoN gate impact on GaN high electron mobility transistor

Electronics letters, 2024-05, Vol.60 (10), p.n/a

2024

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Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Electronics (Basel), 2024-02, Vol.13 (3), p.653

2024

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Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

IEEE electron device letters, 2014-05, Vol.35 (5), p.515-517

2014

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IEEE_Xplore

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.501-506

2015

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IEEE_Xplore

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

Electronics (Basel), 2021-08, Vol.10 (16), p.1893

2021

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A Blind Calibration Model for I/Q Imbalances of Wideband Zero-IF Receivers

Electronics (Basel), 2020-11, Vol.9 (11), p.1868

2020

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A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks

Sensors (Basel, Switzerland), 2017-01, Vol.17 (2), p.223

2017

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An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

Electronics (Basel), 2020-06, Vol.9 (6), p.1032

2020

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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Active and passive electronic components, 2017-01, Vol.2017

2017

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X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Electronics (Basel), 2019-11, Vol.8 (11), p.1312

2019

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MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

Electronics (Basel), 2018-09, Vol.7 (9), p.208

2018

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All-in-One Wafer-Level Solution for MMIC Automatic Testing

Electronics (Basel), 2018-05, Vol.7 (5), p.57

2018

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A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-02, Vol.300, p.117065, Article 117065

2024

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A New Digital to Analog Converter Based on Low-Offset Bandgap Reference

Journal of Electrical and Computer Engineering, 2017-01, Vol.2017, p.1-10

2017

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InGaAs MOSFETs with InP drain

72nd Device Research Conference, 2014, p.119-120

2014

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IEEE_Xplore

Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014, p.1-2

2014

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IEEE_Xplore

A Ka-band low power consumption MMIC core chip for T/R modules

International journal of electronics and communications, 2018-07, Vol.91, p.37-43

2018

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Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

Nanotechnology, 2020-03, Vol.31 (12), p.125604-125604

2020

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Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6472-6478

2020

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Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS 2 Lattice

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6472-6478

2020

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A 11 mW 2.4 GHz 0.18 mu m CMOS Transceivers for Wireless Sensor Networks

Sensors (Basel, Switzerland), 2017-02, Vol.17 (2), p.223-223

2017

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Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

Journal of electronic testing, 2017-04, Vol.33 (2), p.255-259

2017

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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with Si[O.sub.2] and [Si.sub.3][N.sub.4]/Si[O.sub.2] Gate Dielectrics

Active and passive electronic components, 2017-01, p.1

2017

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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO 2 and Si 3 N 4 /SiO 2 Gate Dielectrics

Active and passive electronic components, 2017, Vol.2017, p.1-7

2017

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Study of MoN gate impact on GaN high electron mobility transistor

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

A Blind Calibration Model for I/Q Imbalances of Wideband Zero-IF Receivers

A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks

An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

All-in-One Wafer-Level Solution for MMIC Automatic Testing

A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

A New Digital to Analog Converter Based on Low-Offset Bandgap Reference

InGaAs MOSFETs with InP drain

Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

A Ka-band low power consumption MMIC core chip for T/R modules

Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS 2 Lattice

A 11 mW 2.4 GHz 0.18 mu m CMOS Transceivers for Wireless Sensor Networks

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with Si[O.sub.2] and [Si.sub.3][N.sub.4]/Si[O.sub.2] Gate Dielectrics

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO 2 and Si 3 N 4 /SiO 2 Gate Dielectrics

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