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HRXRD study of the effect of a nanoporous silicon layer on the epitaxial growth quality of GaN layer on the templates of SiC/por-Si/c-Si
Results in physics, 2020-03, Vol.16, p.102919, Article 102919
2020
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Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy
Journal of crystal growth, 2011-05, Vol.323 (1), p.68-71
2011
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Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures
Applied surface science, 2020-04, Vol.508, p.145267, Article 145267
2020
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Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111)
Applied surface science, 2019-05, Vol.476, p.1049-1060
2019
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Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues
Thin solid films, 2018-01, Vol.646, p.158-162
2018
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Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE
Optical materials, 2024-06, Vol.152, p.115471, Article 115471
2024
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Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation
Optical materials, 2022-06, Vol.128, p.112346, Article 112346
2022
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S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties
Optical materials, 2022-07, Vol.129, p.112507, Article 112507
2022
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Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates
Optical materials, 2023-11, Vol.145, p.114451, Article 114451
2023
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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring
Journal of crystal growth, 2012-09, Vol.354 (1), p.188-192
2012
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Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
Quantum electronics (Woodbury, N.Y.), 2019-06, Vol.49 (6), p.545-551
2019
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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
Journal of crystal growth, 2009-03, Vol.311 (7), p.2080-2083
2009
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Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates
Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.274-277
2015
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Quantum-confined stark effect and localization of charge carriers in [Al.sub.0.3][Ga.sub.0.7]N/[Al.sub.0.4][Ga.sub.0.6]N quantum wells with different morphologies
Semiconductors (Woodbury, N.Y.), 2012-08, Vol.46 (8), p.998
2012
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Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
Journal of crystal growth, 2007-04, Vol.301-302, p.469-472
2007
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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1313-1317
2010
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Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al 2O 3 templates
Journal of crystal growth, 2007, Vol.301, p.469-472
2007
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Open Access
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Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
Acta physica Polonica, A, 2008-11, Vol.114 (5), p.1253-1258
2008
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