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Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption

Semiconductors (Woodbury, N.Y.), 2023-11, Vol.57 (11), p.508-512

2023

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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Journal of crystal growth, 2012-09, Vol.354 (1), p.188-192

2012

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Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1847-1849

2020

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Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

Physics of the solid state, 2019-12, Vol.61 (12), p.2282-2285

2019

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Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

Physics of the solid state, 2019-12, Vol.61 (12), p.2277-2281

2019

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Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.417-425

2020

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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

Semiconductors (Woodbury, N.Y.), 2020-05, Vol.54 (5), p.596-608

2020

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Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2117-2119

2018

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Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2128-2131

2018

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Phase separation in InxGa1-xN (0.10 < x < 0.40)

Physica status solidi. C, 2013-03, Vol.10 (3), p.527-531

2013

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Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (12), p.550-553

2023

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On the stress relaxation mechanism of GaN thin films grown on Si(111) substrates

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12046

2019

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Separation of AlN layers from silicon substrates by KOH etching

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12037

2021

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A study of the GaN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of GaN nanocolumns

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12004

2021

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Creation of effective sources of white radiation based on GaP(As,N) on silicon substrates

Journal of physics. Conference series, 2022-03, Vol.2227 (1), p.12021

2022

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The study of the AlN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of AlN nanocolumns

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12042

2020

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Raman analysis of epitaxial GaN layers grown on Si (111) by PA MBE

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12022

2020

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Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1935-1938

2019

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Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1529-1533

2018

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Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures

Quantum electronics (Woodbury, N.Y.), 2019-06, Vol.49 (6), p.545-551

2019

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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors (Woodbury, N.Y.), 2022-04, Vol.56 (4), p.253-258

2022

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Monolith GaAsP/Si dual-junction solar cells grown by MBE

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12040

2019

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Metal-assisted photoenhanced wet chemical etching of GaN epitaxial layers

Journal of physics. Conference series, 2018-12, Vol.1124 (8), p.81001

2018

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Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

Journal of crystal growth, 2007-04, Vol.301-302, p.469-472

2007

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Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.660-663

2018

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Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation

Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy

Phase separation in InxGa1-xN (0.10 < x < 0.40)

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

On the stress relaxation mechanism of GaN thin films grown on Si(111) substrates

Separation of AlN layers from silicon substrates by KOH etching

A study of the GaN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of GaN nanocolumns

Creation of effective sources of white radiation based on GaP(As,N) on silicon substrates

The study of the AlN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of AlN nanocolumns

Raman analysis of epitaxial GaN layers grown on Si (111) by PA MBE

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Monolith GaAsP/Si dual-junction solar cells grown by MBE

Metal-assisted photoenhanced wet chemical etching of GaN epitaxial layers

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

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