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Evaluation of valence band top and electron affinity of SiO2 and Si-based semiconductors using X-ray photoelectron spectroscopy

Japanese Journal of Applied Physics, 2016-07, Vol.55 (8S2)

2016

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Effects of Cl passivation on Al2O3/GaN interface properties

Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1002

2023

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Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(110) thin films on Ge(110)

Applied surface science, 2021-06, Vol.550, p.149236, Article 149236

2021

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(Invited) Photoemission-Based Characterization of Gate Dielectrics and Stack Interfaces

ECS transactions, 2019-07, Vol.92 (4), p.11-19

2019

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Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SG), p.SG1007

2023

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Characterization of high-k gate dielectric/silicon interfaces

Applied surface science, 2002-05, Vol.190 (1), p.66-74

Miyazaki, Seiichi

2002

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Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SH), p.SH1012

2022

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Evaluation of chemical structure and Si segregation of Al/Si(111)

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1059

2023

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Complex dielectric function of Si oxide as evaluated from photoemission measurements

Japanese Journal of Applied Physics, 2020-07, Vol.59 (SM), p.SMMB04, Article SMMB04

2020

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Segregation control for ultrathin Ge layer in Al/Ge(111) system

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA1014

2022

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Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application

MRS proceedings, 2013, Vol.1510 (1), Article mrsf12-1510-dd06-01

Miyazaki, Seiichi

2013

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Magnetoelectronic transport of double stack FePt nanodots

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBK05

2021

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Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.610-615, Article 2021FUP0006

2022

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Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.616-621, Article 2021FUP0007

2022

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Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy

Microelectronic engineering, 2017-06, Vol.178, p.85-88

2017

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Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3)

2018

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Evaluation of field emission properties from multiple-stacked Si quantum dots

Thin solid films, 2016-03, Vol.602, p.68-71

2016

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Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection

Applied physics express, 2018-01, Vol.11 (1), p.11305

2018

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Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGK15

2020

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Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA1008

2022

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Impact of surface pre-treatment on Pt-nanodot formation induced by remote H2-plasma exposure

Japanese Journal of Applied Physics, 2019-07, Vol.58 (SI), p.SIIA15

2019

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Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy

Microelectronic engineering, 2015-11, Vol.147, p.264-268

2015

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Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

Japanese Journal of Applied Physics, 2018-05, Vol.57 (6S1)

2018

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Study on electroluminescence from multiply-stacking valency controlled Si quantum dots

Thin solid films, 2016-03, Vol.602, p.48-51

2016

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Evaluation of valence band top and electron affinity of SiO2 and Si-based semiconductors using X-ray photoelectron spectroscopy

Effects of Cl passivation on Al2O3/GaN interface properties

Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(110) thin films on Ge(110)

(Invited) Photoemission-Based Characterization of Gate Dielectrics and Stack Interfaces

Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure

Characterization of high-k gate dielectric/silicon interfaces

Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure

Evaluation of chemical structure and Si segregation of Al/Si(111)

Complex dielectric function of Si oxide as evaluated from photoemission measurements

Segregation control for ultrathin Ge layer in Al/Ge(111) system

Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application

Magnetoelectronic transport of double stack FePt nanodots

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal

Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures

Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots

Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface

Evaluation of field emission properties from multiple-stacked Si quantum dots

Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface

Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots

Impact of surface pre-treatment on Pt-nanodot formation induced by remote H2-plasma exposure

Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy

Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

Study on electroluminescence from multiply-stacking valency controlled Si quantum dots

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