UB Paderborn / Katalog / Suche / in CDI

Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates

Journal of applied physics, 2014-11, Vol.116 (17)

2014

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High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

Applied physics letters, 2016-12, Vol.109 (23)

2016

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Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

Japanese Journal of Applied Physics, 2017-05, Vol.56 (5S1), p.05DA06-05DA06

2017

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High carrier mobility in orientation-controlled large-grain (≥50 μ m) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Applied physics letters, 2014-06, Vol.104 (25)

2014

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Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization

Applied physics letters, 2019-07, Vol.115 (4)

2019

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Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C)

Applied physics letters, 2013-08, Vol.103 (8)

2013

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High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Applied physics letters, 2009-07, Vol.95 (2)

2009

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Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Solid-state electronics, 2009-11, Vol.53 (11), p.1159-1164

2009

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Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Room-temperature generation of giant pure spin currents using epitaxial Co2FeSi spin injectors

NPG Asia materials, 2012-03, Vol.4 (3), p.e9-e9

2012

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Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide

Crystal growth & design, 2012-10, Vol.12 (10), p.4703-4707

2012

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Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Applied physics letters, 2016-06, Vol.108 (26)

2016

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Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth

Applied physics letters, 2012-08, Vol.101 (9), p.91905

2012

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Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Applied physics letters, 2015-12, Vol.107 (26)

2015

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Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Applied physics letters, 2014-09, Vol.105 (10)

2014

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Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

Journal of applied physics, 2015-09, Vol.118 (9)

2015

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Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

Applied physics letters, 2006-10, Vol.89 (18), p.182120-182120-3

2006

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Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth

Applied physics letters, 2011-07, Vol.99 (3), p.032103-032103-3

2011

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(111)-oriented large-grain (≥50 µm) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization

Japanese Journal of Applied Physics, 2014-02, Vol.53 (2), p.20302-1-020302-3

2014

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Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

Applied physics letters, 2012-12, Vol.101 (24)

2012

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High-quality Co2FeSi0.5Al0.5/Si heterostructures for spin injection in silicon spintronic devices

Thin solid films, 2014-04, Vol.557, p.390-393

2014

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High Sn-concentration (~8%) GeSn by low-temperature (~150°C) solid-phase epitaxy of a-GeSn/c-Ge

Thin solid films, 2016-03, Vol.602, p.20-23

2016

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Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications

Japanese Journal of Applied Physics, 2011-01, Vol.50 (1), p.010101-010101-7

2011

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Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template

Applied physics letters, 2012-02, Vol.100 (9), p.092111-092111-4

2012

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Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO2 substrates

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

High carrier mobility in orientation-controlled large-grain (≥50 μ m) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallization

Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C)

High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)

Room-temperature generation of giant pure spin currents using epitaxial Co2FeSi spin injectors

Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth

Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth

(111)-oriented large-grain (≥50 µm) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

High-quality Co2FeSi0.5Al0.5/Si heterostructures for spin injection in silicon spintronic devices

High Sn-concentration (~8%) GeSn by low-temperature (~150°C) solid-phase epitaxy of a-GeSn/c-Ge

Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications

Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template

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