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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Applied physics letters, 2012-08, Vol.101 (7), p.72106

2012

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Role of glycerophosphodiester phosphodiesterase in rice leaf blades in elevated CO 2 environments

Plant biology (Stuttgart, Germany), 2023-01, Vol.25 (1), p.54-61

2023

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Improvement of magnetic and structural stabilities in high-quality Co2FeSi1−xAlx/Si heterointerfaces

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Thin solid films, 2016-08, Vol.613, p.24-28

2016

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Role of glycerophosphodiester phosphodiesterase in rice leaf blades in elevated CO2 environments

Plant biology (Stuttgart, Germany), 2023-01, Vol.25 (1), p.54-61

2023

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A pseudo-single-crystalline germanium film for flexible electronics

Applied physics letters, 2015-01, Vol.106 (4)

2015

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Association between serum uric acid and lumbar spine bone mineral density in peri- and postmenopausal Japanese women

Osteoporosis international, 2014-03, Vol.25 (3), p.1099-1105

2014

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Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

Applied physics letters, 2014-11, Vol.105 (20)

2014

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Tomato Mi-gene Resistance-Breaking Populations of Meloidogyne Show Variable Reproduction on Susceptible and Resistant Crop Cultivars

Journal of nematology, 2023-02, Vol.55 (1), p.20230043-884

2023

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Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Applied physics letters, 2009-05, Vol.94 (18)

2009

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Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

Applied physics letters, 2010-04, Vol.96 (16)

2010

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Mechanism of Fermi level pinning at metal/germanium interfaces

Physical review. B, Condensed matter and materials physics, 2011-11, Vol.84 (20), Article 205301

2011

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Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi Epilayers grown on Ge(111)

Physical review letters, 2009-04, Vol.102 (13), p.137204-137204

2009

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Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10μm) Ge-rich SiGe on insulator by gold-induced crystallization

Thin solid films, 2016-03, Vol.602, p.3-6

2016

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Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment

Applied physics letters, 2014-04, Vol.104 (17)

2014

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Development of a dose distribution shifter to fit inside the collimator of a Boron Neutron Capture Therapy irradiation system to treat superficial tumours

Physica medica, 2021-02, Vol.82, p.17-24

2021

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Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization

Thin solid films, 2014-04, Vol.557, p.135-138

2014

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Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Applied physics letters, 2011-07, Vol.99 (1), p.012113-012113-3

2011

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Electric-field control of spin accumulation signals in silicon at room temperature

Applied physics letters, 2011-09, Vol.99 (13), p.132511-132511-3

2011

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An ultra-thin buffer layer for Ge epitaxial layers on Si

Applied physics letters, 2013-03, Vol.102 (12)

2013

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Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Thin solid films, 2014-04, Vol.557, p.76-79

2014

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In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

Thin solid films, 2014-04, Vol.557, p.139-142

2014

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Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

Journal of applied physics, 2010-05, Vol.107 (9)

2010

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Lateral spin valves with two-different Heusler-alloy electrodes on the same platform

Applied physics letters, 2013-11, Vol.103 (21)

2013

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Large single-crystal Ge-on-insulator by thermally-assisted (~400°C) Si-seeded-pulse-laser annealing

Materials science in semiconductor processing, 2017-11, Vol.70, p.8-11

2017

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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Role of glycerophosphodiester phosphodiesterase in rice leaf blades in elevated CO 2 environments

Improvement of magnetic and structural stabilities in high-quality Co2FeSi1−xAlx/Si heterointerfaces

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Role of glycerophosphodiester phosphodiesterase in rice leaf blades in elevated CO2 environments

A pseudo-single-crystalline germanium film for flexible electronics

Association between serum uric acid and lumbar spine bone mineral density in peri- and postmenopausal Japanese women

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

Tomato Mi-gene Resistance-Breaking Populations of Meloidogyne Show Variable Reproduction on Susceptible and Resistant Crop Cultivars

Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

Mechanism of Fermi level pinning at metal/germanium interfaces

Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi Epilayers grown on Ge(111)

Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥10μm) Ge-rich SiGe on insulator by gold-induced crystallization

Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment

Development of a dose distribution shifter to fit inside the collimator of a Boron Neutron Capture Therapy irradiation system to treat superficial tumours

Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Electric-field control of spin accumulation signals in silicon at room temperature

An ultra-thin buffer layer for Ge epitaxial layers on Si

Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

Lateral spin valves with two-different Heusler-alloy electrodes on the same platform

Large single-crystal Ge-on-insulator by thermally-assisted (~400°C) Si-seeded-pulse-laser annealing

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