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Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Materials science forum, 2007-09, Vol.556-557, p.271-274

2007

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Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Materials science forum, 2006-10, Vol.527-529, p.415-418

2006

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Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy

Materials science forum, 2006-10, Vol.527-529, p.231-234

2006

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Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

Materials science forum, 2006-10, Vol.527-529, p.1359-1362

2006

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4H-SiC Epitaxial Growth for High-Power Devices

Materials science forum, 2003-09, Vol.433-436, p.131-136

2003

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Conditions for Micropipe Dissociation by 4H-SiC CVD Growth

Materials science forum, 2003-09, Vol.433-436, p.261-264

2003

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Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

MRS proceedings, 2004, Vol.815, Article J2.1

2004

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Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Materials science forum, 2002-04, Vol.389-393, p.279-282

2002

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Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System

Materials science forum, 1998-02, Vol.264-268, p.139-142

1998

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Observation of 2in SiC Wafer by SWBXT at SPring-8

Materials science forum, 2002-04, Vol.389-393, p.411-414

2002

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Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8

Materials science forum, 2002-04, Vol.389-393, p.407-410

2002

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Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

Materials Science Forum, 2005-05, Vol.483-485, p.97-100

2005

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IEGT design concept against operation instability and its impact to application

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000, p.25-28

2000

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Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

Japanese Journal of Applied Physics, 2005-01, Vol.44 (6L), p.L806

2005

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Hot-wall CVD growth of 4H-SiC using Si sub 2 Cl sub 6 + C sub 3 H sub 8 + H sub 2 system

Materials science forum, 2001-10, Vol.389-393 (1), p.199-202

2001

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A 4.15 kV 9.07-m[Omega]·cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-02, Vol.26 (2), p.99

2005

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A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-02, Vol.26 (2), p.99-101

2005

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A 4.15 kV 9.07-m/spl Omega/.cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-02, Vol.26 (2), p.99-101

2005

Volltextzugriff (PDF)

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

Materials science forum, 2007-09, Vol.556-557, p.251-254

2007

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A 4.15 kV 9.07-m Omega .cm super(2) 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE electron device letters, 2005-01, Vol.26 (2)

2005

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Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001) pin Diodes by Electroluminescence Imaging

Materials science forum, 2007-01, Vol.556-557, p.251-254

2007

Volltextzugriff (PDF)

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

Materials Science Forum, 2005-05, Vol.483-485, p.969-972

2005

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Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping

Materials science forum, 2006-10, Vol.527-529, p.375-378

2006

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Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

Materials Science Forum, 2005-05, Vol.483-485, p.721-724

2005

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4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.357-360

2004

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Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy

Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation

4H-SiC Epitaxial Growth for High-Power Devices

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System

Observation of 2in SiC Wafer by SWBXT at SPring-8

Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

IEGT design concept against operation instability and its impact to application

Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

Hot-wall CVD growth of 4H-SiC using Si sub 2 Cl sub 6 + C sub 3 H sub 8 + H sub 2 system

A 4.15 kV 9.07-m[Omega]·cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

A 4.15 kV 9.07-m/spl Omega/.cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

A 4.15 kV 9.07-m Omega .cm super(2) 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001) pin Diodes by Electroluminescence Imaging

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping

Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode

4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation

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