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Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects

Solid-state electronics, 2014-11, Vol.101, p.126-130

2014

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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2072-2080

2011

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HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.571-579

2013

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HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2671-2678

2010

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Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CP07-04CP07-5

2013

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Dynamic-Carrier-Distribution-Based Compact Modeling of p--i--n Diode Reverse Recovery Effects

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BP06-02BP06-4

2012

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Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions

IEICE transactions on electronics, 2012, Vol.E95.C (10), p.1682-1688

2012

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Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04EP13-6

2014

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Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency

IEICE transactions on electronics, 2014-01, Vol.E97.C (10), p.1021-1027

2014

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Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BC07-02BC07-5

2012

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Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2560

2008

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Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

IEICE transactions on electronics, 2013, Vol.E96.C (5), p.744-751

2013

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Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

IEICE transactions on electronics, 2013, Vol.E96.C (10), p.1339-1347

2013

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Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CC29-04CC29-5

2013

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Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DC12-04DC12-4

2011

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Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DP03-04DP03-5

2011

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NAT2 genotype guided regimen reduces isoniazid-induced liver injury and early treatment failure in the 6-month four-drug standard treatment of tuberculosis: A randomized controlled trial for pharmacogenetics-based therapy

European journal of clinical pharmacology, 2013-05, Vol.69 (5), p.1091-1101

2013

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Compact Modeling of Expansion Effects in LDMOS

IEICE transactions on electronics, 2012, Vol.E95.C (11), p.1817-1823

2012

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Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Temperature dependence of switching performance in IGBT circuits and its compact modeling

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.148-151

2011

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Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Effect of Carrier Transit Delay on Complementary Metal--Oxide--Semiconductor Switching Performance

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DC15-04DC15-4

2010

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Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects

Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design

HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge

Dynamic-Carrier-Distribution-Based Compact Modeling of p--i--n Diode Reverse Recovery Effects

Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects

Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions

Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction

Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency

Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors

Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors

Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics

NAT2 genotype guided regimen reduces isoniazid-induced liver injury and early treatment failure in the 6-month four-drug standard treatment of tuberculosis: A randomized controlled trial for pharmacogenetics-based therapy

Compact Modeling of Expansion Effects in LDMOS

Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics

Temperature dependence of switching performance in IGBT circuits and its compact modeling

Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model

Effect of Carrier Transit Delay on Complementary Metal--Oxide--Semiconductor Switching Performance

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