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RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3278-3284

2020

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Tolerance Induction of Horse Allergy by Horse Contact with Curly Horses

Pneumologie (Stuttgart, Germany), 2017-07, Vol.71 (7), p.480-483

2017

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SiC devices: physics and numerical simulation

IEEE transactions on electron devices, 1994-06, Vol.41 (6), p.1040-1054

1994

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Horse Allergy: Curly Horses Allow Horse Allergic Riders To Ride Again

Pneumologie (Stuttgart, Germany), 2015-12, Vol.69 (12), p.711-718

2015

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Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation

Materials science forum, 2013-01, Vol.740-742, p.773-776

2013

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Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC

Materials science forum, 2014-02, Vol.778-780, p.487-490

2014

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Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects

Materials science forum, 2007-01, Vol.556-557, p.889-894

2007

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Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Materials science forum, 2004-06, Vol.457-460, p.1201-1204

2004

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An 1800 V triple implanted vertical 6H-SiC MOSFET

IEEE transactions on electron devices, 1999-03, Vol.46 (3), p.542-545

1999

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Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)

Materials Science Forum, 2016-05, Vol.858, p.917-920

2016

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Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability

Materials science forum, 2015-06, Vol.821-823, p.806-809

2015

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BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics

Materials science forum, 2004-01, Vol.457-460, p.1245-1248

2004

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Key power semiconductor device concepts for the next decade

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2002, Vol.1, p.564-569 vol.1

2002

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Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.656-659

2015

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Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.887-890

2013

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Experimental analysis of bipolar SiC-devices for future energy distribution systems

2014 16th European Conference on Power Electronics and Applications, 2014, p.1-10

2014

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SiC power devices with low on-resistance for fast switching applications

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000, p.213-216

2000

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A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.134-141

2000

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Application-Oriented Unipolar Switching SiC Devices

Materials science forum, 2002-04, Vol.389-393, p.1185-1190

2002

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Periphery protection for silicon carbide devices: state of the art and simulation

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.210-217

1997

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Switching behaviour of fast high voltage SiC pn-diodes

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998, p.127-130

1998

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Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Materials science forum, 2000-05, Vol.338-342, p.1243-1246

2000

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Hydrogen-related mechanical stress in amorphous silicon and plasma-deposited silicon nitride

Thin solid films, 1983-01, Vol.110 (4), p.291-304

1983

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Dynamic characteristics of high voltage 4H-SiC vertical JFETs

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312), 1999, p.339-342

1999

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To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes

Materials science forum, 2003-09, Vol.433-436, p.895-900

2003

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RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC

Tolerance Induction of Horse Allergy by Horse Contact with Curly Horses

SiC devices: physics and numerical simulation

Horse Allergy: Curly Horses Allow Horse Allergic Riders To Ride Again

Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation

Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC

Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

An 1800 V triple implanted vertical 6H-SiC MOSFET

Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)

Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability

BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics

Key power semiconductor device concepts for the next decade

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC

Experimental analysis of bipolar SiC-devices for future energy distribution systems

SiC power devices with low on-resistance for fast switching applications

A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices

Application-Oriented Unipolar Switching SiC Devices

Periphery protection for silicon carbide devices: state of the art and simulation

Switching behaviour of fast high voltage SiC pn-diodes

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Hydrogen-related mechanical stress in amorphous silicon and plasma-deposited silicon nitride

Dynamic characteristics of high voltage 4H-SiC vertical JFETs

To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes

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