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Doubts about first report of krokodil use in Canada

Canadian Medical Association journal (CMAJ), 2019-09, Vol.191 (37), p.E1033-E1033

Mitchell, Ian V.

2019

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Vaporizer legalization

Canadian Medical Association journal (CMAJ), 2014-09, Vol.186 (12), p.937-937

Mitchell, Ian V

2014

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Can emergency physicians accurately rule out clinically important cervical spine injuries by using computed tomography?

Canadian journal of emergency medicine, 2014-03, Vol.16 (2), p.131-135

2014

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Nonlinear optical response of As+-ion implanted GaAs studied using time resolved reflectivity

Applied physics letters, 1996-06, Vol.68 (23), p.3287-3289

1996

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Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching

Applied physics letters, 2002-12, Vol.81 (25), p.4826-4828

2002

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Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

Applied physics letters, 1999-04, Vol.74 (16), p.2304-2306

1999

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Doping effects on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films on sapphire

Applied physics letters, 1995-08, Vol.67 (7), p.924-926

1995

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Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates

Journal of applied physics, 1995-11, Vol.78 (9), p.5412-5421

1995

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Effect of annealing temperature ramp rate on bubble formationin helium-implanted silicon

Applied physics letters, 2005-06, Vol.86 (24), p.241907-241907-3

2005

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Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon

Applied physics letters, 2005-06, Vol.86 (24)

2005

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Ordered Arrays of Colloidal Gold Nanoparticles Fabricated by Focused Ion Beam Techniques

MRS proceedings, 2006, Vol.983, Article 0983-LL01-05

2006

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Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

MRS proceedings, 2006, Vol.983, Article 0983-LL05-06

2006

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Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon

Japanese Journal of Applied Physics, 1973-01, Vol.12 (5), p.735-741

1973

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Annealing behavior of implanted helium in indium phosphide

Applied physics letters, 2001-01, Vol.78 (2), p.207-209

2001

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Physics and chemistry using fast ion beams

Physics in Canada, 1999-09, Vol.55 (5), p.251

Mitchell, Ian V

1999

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Co-Implantation and the Role of Implant Damage in the Thermal Stability of Implanted Helium in Indium Phosphide

MRS proceedings, 2000, Vol.647, Article O6.4

2000

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Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

MRS proceedings, 2000, Vol.647, Article O5.16

2000

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Effect of interaction between point defects and pre-existing dislocation loops on anomalous B diffusion in silicon

Materials chemistry and physics, 1996-11, Vol.46 (2), p.252-258

1996

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Role of Si(100) Surface Patterns in the Phase Separation of Cu/Sn Thin Films

MRS proceedings, 2001, Vol.672, Article O20.1

2001

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Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing

IEEE journal of quantum electronics, 1999-09, Vol.35 (9), p.1354-1363

1999

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Nanometer-scale Pattern Transfer Using Ion Implantation

MRS proceedings, 2002, Vol.739, Article H8.3

2002

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Suppression of Secondary Defects in Silicon by Carbon Implantation

MRS proceedings, 1995, Vol.396, Article 847

1995

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Modification of the second-order optical susceptibility in Al x Ga1− x As by ion-beam induced amorphization

Applied physics letters, 1994-07, Vol.65 (2), p.216-218

1994

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Crystallization Kinetics of Fe-DOPED A1 2 0 3

MRS proceedings, 1994, Vol.357, Article 201

1994

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Crystallization Kinetics of Fe-DOPED A1203

MRS proceedings, 1994, Vol.357

1994

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Doubts about first report of krokodil use in Canada

Vaporizer legalization

Can emergency physicians accurately rule out clinically important cervical spine injuries by using computed tomography?

Nonlinear optical response of As+-ion implanted GaAs studied using time resolved reflectivity

Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching

Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

Doping effects on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films on sapphire

Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates

Effect of annealing temperature ramp rate on bubble formationin helium-implanted silicon

Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon

Ordered Arrays of Colloidal Gold Nanoparticles Fabricated by Focused Ion Beam Techniques

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon

Annealing behavior of implanted helium in indium phosphide

Physics and chemistry using fast ion beams

Co-Implantation and the Role of Implant Damage in the Thermal Stability of Implanted Helium in Indium Phosphide

Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

Effect of interaction between point defects and pre-existing dislocation loops on anomalous B diffusion in silicon

Role of Si(100) Surface Patterns in the Phase Separation of Cu/Sn Thin Films

Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing

Nanometer-scale Pattern Transfer Using Ion Implantation

Suppression of Secondary Defects in Silicon by Carbon Implantation

Modification of the second-order optical susceptibility in Al x Ga1− x As by ion-beam induced amorphization

Crystallization Kinetics of Fe-DOPED A1 2 0 3

Crystallization Kinetics of Fe-DOPED A1203

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