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Extracting Physically Unclonable Function From Spin Transfer Switching Characteristics in Magnetic Tunnel Junctions

IEEE transactions on magnetics, 2014-11, Vol.50 (11), p.1-4

2014

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Issues and Case Studies on an IoT Popularization through IoT Predictive Maintenance Businesses

SYSTEMS, CONTROL AND INFORMATION, 2023/07/15, Vol.67(7), pp.275-280

2023

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Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.4

2024

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A Report on a Educational Camp on the Control Engineering and Techniques Collaborated with a Corporation

SYSTEMS, CONTROL AND INFORMATION, 2022/06/15, Vol.66(6), pp.202-208

2022

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Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation

IEEE transactions on circuits and systems. II, Express briefs, 2017-04, Vol.64 (4), p.462-466

2017

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Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4197-4203

2014

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Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Microelectronics and reliability, 2017-03, Vol.70, p.12-21

2017

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Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy

Applied physics letters, 2006-01, Vol.88 (3), p.032906-032906-3

2006

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Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CF13

2017

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Study on the relation between interface trap creation and MOSFET degradation under channel hot carrier stressing at cryogenic temperatures

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.4

2024

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Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1901-1904

2009

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Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor

Jpn J Appl Phys, 2012-04, Vol.51 (4), p.04DA02-04DA02-5

2012

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Resistive switching memory using buckybowl sumanene-inserted bilayer graphene

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.4

2024

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Stacked structure dependence on resistive switching characteristics in sumanene molecular memory

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.4

2024

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Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.4

2024

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Fabrication of metal/oxide/fluorographene/oxide/silicon capacitors and their charge trapping properties

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SG), p.SG1035

2023

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Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.041302-041302-6

2011

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Double Junction Tunnel Using Si Nanocrystalline Layer for Nonvolatile Memory Devices

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4R), p.41302

2011

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Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2010-07, Vol.49 (7), p.071102-071102-6

2010

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Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S3), p.6

2018

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Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Japanese Journal of Applied Physics, 2008-03, Vol.47 (3R), p.1456

2008

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Evaluation of electron traps in SiN x by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBK02

2019

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Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4R), p.41105

2012

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Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.041105-041105-6

2012

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Extracting Physically Unclonable Function From Spin Transfer Switching Characteristics in Magnetic Tunnel Junctions

Issues and Case Studies on an IoT Popularization through IoT Predictive Maintenance Businesses

Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES

A Report on a Educational Camp on the Control Engineering and Techniques Collaborated with a Corporation

Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation

Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Structural and electrical evolution of gate dielectric breakdown observed by conductive atomic force microscopy

Physically unclonable function using initial waveform of ring oscillators on 65 nm CMOS technology

Study on the relation between interface trap creation and MOSFET degradation under channel hot carrier stressing at cryogenic temperatures

Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies

Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4

Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor

Resistive switching memory using buckybowl sumanene-inserted bilayer graphene

Stacked structure dependence on resistive switching characteristics in sumanene molecular memory

Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films

Fabrication of metal/oxide/fluorographene/oxide/silicon capacitors and their charge trapping properties

Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices

Double Junction Tunnel Using Si Nanocrystalline Layer for Nonvolatile Memory Devices

Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistors

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Evaluation of electron traps in SiN x by discharge current transient spectroscopy: verification of validity by comparing with conventional DLTS

Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

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