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Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals

Journal of crystal growth, 2019-10, Vol.523, p.125151, Article 125151

2019

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Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope

Crystal growth & design, 2017-05, Vol.17 (5), p.2844-2851

2017

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Cortisol level measurements in fingernails as a retrospective index of hormone production

Psychoneuroendocrinology, 2015-04, Vol.54, p.24-30

2015

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Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution

Journal of crystal growth, 2015-08, Vol.423, p.45-49

2015

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Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

Journal of crystal growth, 2014-09, Vol.401, p.681-685

2014

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Raman characterization of damaged layers of 4H-SiC induced by scratching

AIP advances, 2016-01, Vol.6 (1), p.015207-015207-8

2016

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Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth

Materials science forum, 2019-07, Vol.963, p.71-74

2019

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Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

Japanese Journal of Applied Physics, 2020-05, Vol.59 (5), p.51004

2020

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Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC

Materials science forum, 2018-06, Vol.924, p.55-59

2018

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Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Materials science forum, 2020-07, Vol.1004, p.224-230

2020

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Associations between diurnal 24-hour rhythm in ambulatory heart rate variability and the timing and amount of meals during the day shift in rotating shift workers

PloS one, 2014-09, Vol.9 (9), p.e106643

2014

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4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

Materials science forum, 2015-06, Vol.821-823, p.9-13

2015

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Diurnal 24-Hour Rhythm in Ambulatory Heart Rate Variability during the Day Shift in Rotating Shift Workers

Journal of biological rhythms, 2013-06, Vol.28 (3), p.227-236

2013

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Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

Materials science forum, 2013-01, Vol.740-742, p.23-26

2013

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Effect of Al addition to Si-Ni flux on pulsed laser deposition of SiC thin films

Journal of the Ceramic Society of Japan, 2016-01, Vol.124 (5), p.506-509

2016

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Quantification of nitrogen in heavily doped silicon carbide by soft X-ray emission spectroscopy

Journal of crystal growth, 2023-10, Vol.619, p.127345, Article 127345

2023

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Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

Journal of crystal growth, 2024-05, Vol.634, p.127691, Article 127691

2024

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Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC

Materials science forum, 2014-02, Vol.778-780, p.475-478

2014

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Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC

Crystal growth & design, 2024-03, Vol.24 (6), p.2526-2532

2024

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Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy

Materials science forum, 2009-01, Vol.600-603, p.615-618

2009

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Control of Void Formation in 4H-SiC Solution Growth

Materials science forum, 2012-05, Vol.717-720, p.57-60

2012

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Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy

Materials science forum, 2013-01, Vol.740-742, p.3-6

2013

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Modulation of Growth Rate by Electric Current in Liquid-Phase Epitaxy of 4H-SiC

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.085503-085503-6

2013

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Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth

Journal of crystal growth, 2021-08, Vol.568-569, p.126189, Article 126189

2021

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Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates

Applied physics express, 2021-08, Vol.14 (8), p.85506

2021

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Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals

Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope

Cortisol level measurements in fingernails as a retrospective index of hormone production

Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution

Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

Raman characterization of damaged layers of 4H-SiC induced by scratching

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth

Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

Influence of Additives on Surface Smoothness and Polytype Stability in Solution Growth of n-Type 4H-SiC

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Associations between diurnal 24-hour rhythm in ambulatory heart rate variability and the timing and amount of meals during the day shift in rotating shift workers

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions

Diurnal 24-Hour Rhythm in Ambulatory Heart Rate Variability during the Day Shift in Rotating Shift Workers

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

Effect of Al addition to Si-Ni flux on pulsed laser deposition of SiC thin films

Quantification of nitrogen in heavily doped silicon carbide by soft X-ray emission spectroscopy

Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC

Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC

Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy

Control of Void Formation in 4H-SiC Solution Growth

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy

Modulation of Growth Rate by Electric Current in Liquid-Phase Epitaxy of 4H-SiC

Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth

Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates

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