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Role of excess Bi in SrBi2Ta2O9 thin film prepared using chemical liquid deposition and sol-gel method

Japanese journal of applied physics, 1997, Vol.36 (9B), p.5904-5907

1997

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Preparation of MgO Protective Layer for AC‐Type Plasma Display Panel by Means of Screen‐Printing

Journal of the Electrochemical Society, 1995-05, Vol.142 (5), p.1396-1401

1995

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Characterization of Ferroelectric SrBi2Ta2 O 9 Thin Films Prepared from Alkoxide Solutions

Journal of the Electrochemical Society, 1999-02, Vol.146 (2), p.685-690

1999

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Sensitive giant magnetoresistive sensor using AC bias magnetic field

Japanese Journal of Applied Physics, 1997-12, Vol.36 (12A), p.L1591-L1593

1997

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Correlation Between Composition, Microstructure, and Ferroelectric Properties of SrBi2Ta2 O 9 Thin Films

Journal of the Electrochemical Society, 1997-07, Vol.144 (7), p.L185-L187

1997

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Application of screen-printed rare earth oxide protective film to alternating-current plasma display panels

Electronics & communications in Japan. Part 2, Electronics, 1996, Vol.79 (8), p.31-41

1996

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ZnS: Mn thin film electroluminescent devices having doubly-stacked insulating layers

Japanese Journal of Applied Physics, 1987-05, Vol.26 (5), p.541-543

1987

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MgO powders for protective layer of alternating current plasma display panel

Electronics & communications in Japan. Part 2, Electronics, 1996, Vol.79 (4), p.55-66

1996

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Effects of annealing on ZnS:Tb, F electroluminescent thin films prepared by rf magnetron sputtering

Japanese Journal of Applied Physics, 1987-05, Vol.26 (5), p.558-560

1987

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Difference in electroluminescent ZnS:Tb, F thin films prepared by electron-beam evaporation and RF magnetron sputtering

Japanese Journal of Applied Physics, 1987-07, Vol.26 (7), p.L1205-L1207

1987

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Highly sensitive giant magnetoresistive sensor consisting of NiO spin-valve element and AC bias current line

Journal of magnetism and magnetic materials, 1999-06, Vol.198, p.128-130

1999

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Spin-Valve Film for Sensitive Giant Magnetoresistive Sensor Using AC Bias Magnetic Field

Materials transactions. JIM, 1999, Vol.40 (3), p.186-192

1999

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High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.187-190

2003

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Effect of Preparation Condition on the Activation of the Screen-Printed MgO Protective Layer for AC-PDP

The Journal of the Institute of Television Engineers of Japan, 1996/08/20, Vol.50(8), pp.1125-1131

1996

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Preparation and evaluation of Sr 0.7 Bi 2.3 Ta 2 O 9 thin films by chemical process

Integrated ferroelectrics, 1998-01, Vol.20 (1-4), p.269-270

1998

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Luminance Characteristics of EL Devices using Electron Emitting Layers and Current Limitting Layers

The Journal of the Institute of Television Engineers of Japan, 1993/07/20, Vol.47(7), pp.983-989

1993

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Effect of Annealing Method to Crystalize on Sr 0.9 Bi 2.3 Ta 2 O 9+α Thin Film Properties Formed from Alkoxide Solution

Japanese Journal of Applied Physics, 1998-01, Vol.37 (1R), p.192

1998

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Application of Alkaline-Earth-Metal and Rare-Earth-Element Complexing Oxide Powders for the Screen-printed Protective Layer of AC-PDP

The Journal of the Institute of Television Engineers of Japan, 1996/01/20, Vol.50(1), pp.95-102

1996

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Role of Excess Bi in SrBi 2 Ta 2 O 9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9S), p.5904

1997

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An Application of Alkaline-Earth-Metal and Rare-Earth-Element Complex-Oxide Formation-solution to Screen-printed Protective Layer for AC-type PDP

The Journal of the Institute of Television Engineers of Japan, 1995/04/20, Vol.49(4), pp.571-573

1995

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Effect of MgO Liquid Binder on Film Properties of Screen-printed MgO Protective Layer for AC-PDP

The Journal of the Institute of Television Engineers of Japan, 1995/09/20, Vol.49(9), pp.1171-1176

1995

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Spin-Valve Film for Sensitive Giant Magnetoresistive Sensor Using AC Bias Magnetic Field

Journal of the Japan Institute of Metals and Materials, 1998, Vol.62(8), pp.701-707

1998

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Preparation and evaluation of Sr0.7Bi2.3Ta2O9 thin films by chemical process

Integrated ferroelectrics, 1998-01, Vol.20 (1-4), p.269-270

1998

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Spin-valve film for sensitive giant magnetoresistive sensor using AC bias magnetic field

Nihon Kinzoku Gakkai shi (1952), 1998, Vol.62 (8), p.701-707

1998

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Orientation Control of Sr 0.7 Bi 2.3 Ta 2 O 9+α Thin Films by Chemical Liquid Deposition

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3S), p.1597

1997

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Role of excess Bi in SrBi2Ta2O9 thin film prepared using chemical liquid deposition and sol-gel method

Preparation of MgO Protective Layer for AC‐Type Plasma Display Panel by Means of Screen‐Printing

Characterization of Ferroelectric SrBi2Ta2 O 9 Thin Films Prepared from Alkoxide Solutions

Sensitive giant magnetoresistive sensor using AC bias magnetic field

Correlation Between Composition, Microstructure, and Ferroelectric Properties of SrBi2Ta2 O 9 Thin Films

Application of screen-printed rare earth oxide protective film to alternating-current plasma display panels

ZnS: Mn thin film electroluminescent devices having doubly-stacked insulating layers

MgO powders for protective layer of alternating current plasma display panel

Effects of annealing on ZnS:Tb, F electroluminescent thin films prepared by rf magnetron sputtering

Difference in electroluminescent ZnS:Tb, F thin films prepared by electron-beam evaporation and RF magnetron sputtering

Highly sensitive giant magnetoresistive sensor consisting of NiO spin-valve element and AC bias current line

Spin-Valve Film for Sensitive Giant Magnetoresistive Sensor Using AC Bias Magnetic Field

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Effect of Preparation Condition on the Activation of the Screen-Printed MgO Protective Layer for AC-PDP

Preparation and evaluation of Sr 0.7 Bi 2.3 Ta 2 O 9 thin films by chemical process

Luminance Characteristics of EL Devices using Electron Emitting Layers and Current Limitting Layers

Effect of Annealing Method to Crystalize on Sr 0.9 Bi 2.3 Ta 2 O 9+α Thin Film Properties Formed from Alkoxide Solution

Application of Alkaline-Earth-Metal and Rare-Earth-Element Complexing Oxide Powders for the Screen-printed Protective Layer of AC-PDP

Role of Excess Bi in SrBi 2 Ta 2 O 9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method

An Application of Alkaline-Earth-Metal and Rare-Earth-Element Complex-Oxide Formation-solution to Screen-printed Protective Layer for AC-type PDP

Effect of MgO Liquid Binder on Film Properties of Screen-printed MgO Protective Layer for AC-PDP

Spin-Valve Film for Sensitive Giant Magnetoresistive Sensor Using AC Bias Magnetic Field

Preparation and evaluation of Sr0.7Bi2.3Ta2O9 thin films by chemical process

Spin-valve film for sensitive giant magnetoresistive sensor using AC bias magnetic field

Orientation Control of Sr 0.7 Bi 2.3 Ta 2 O 9+α Thin Films by Chemical Liquid Deposition

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