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The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

IEEE transactions on electron devices, 1990-08, Vol.37 (8), p.1869-1876

1990

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Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors

IEEE electron device letters, 1997-02, Vol.18 (2), p.51-53

1997

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A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices

IEEE transactions on electron devices, 1990-05, Vol.37 (5), p.1301-1307

1990

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The characterization of hot carrier damage in p-channel transistors

IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.152-156

1993

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Examination of gradual-junction p-MOS structures for hot carrier control using a new lifetime extraction method

IEEE transactions on electron devices, 1992-10, Vol.39 (10), p.2290-2297

1992

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Sub-500-ps 64-b ALUs in 0.18-μm SOI/bulk CMOS: design and scaling trends

IEEE journal of solid-state circuits, 2001-11, Vol.36 (11), p.1636-1646

2001

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AC versus DC hot-carrier degradation in n-channel MOSFETs

IEEE transactions on electron devices, 1993-01, Vol.40 (1), p.96-104

1993

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Sub-500-ps 64-b ALUs in 0.18-[micro]m SOI/bulk CMOS: design and scaling trends

IEEE journal of solid-state circuits, 2001-11, Vol.36 (11), p.1636

2001

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Sub-500-ps 64-b ALUs in 0.18-/spl mu/m SOI/bulk CMOS: design and scaling trends

IEEE journal of solid-state circuits, 2001-11, Vol.36 (11), p.1636-1646

2001

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Parasitic bipolar gain reduction and the optimization of 0.25-μm partially depleted SOI MOSFETs

IEEE transactions on electron devices, 1999-11, Vol.46 (11), p.2201-2209

1999

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DC and transient characterization of a compact Schottky body contact technology for SOI transistors

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1451-1456

1999

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Parasitic bipolar gain reduction and the optimization of 0.25-/spl mu/m partially depleted SOI MOSFETs

IEEE transactions on electron devices, 1999-11, Vol.46 (11), p.2201-2209

1999

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Transient measurements of SOI body contact effectiveness

IEEE electron device letters, 1998-12, Vol.19 (12), p.499-501

1998

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Analysis of gate oxide thickness hot carrier effects in surface channel P-MOSFET's

IEEE transactions on electron devices, 1995-01, Vol.42 (1), p.116-122

1995

Volltextzugriff (PDF)

Circuit design guidelines for n-channel MOSFET hot carrier robustness

IEEE transactions on electron devices, 1993-07, Vol.40 (7), p.1284-1295

1993

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Anomalous hot-carrier behavior for LDD p-channel transistors

IEEE electron device letters, 1993-11, Vol.14 (11), p.536-538

1993

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New hot carrier failure criterion for p-channel transistors based on transistor leakage currents

Solid-state electronics, 1996, Vol.39 (11), p.1681-1682

1996

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Examination of oxide damage during high-current stress of n-MOS transistors

IEEE transactions on electron devices, 1993-05, Vol.40 (5), p.980-985

1993

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Hot-carrier stress damage in the gate 'off' state in n-channel transistors

IEEE transactions on electron devices, 1992-07, Vol.39 (7), p.1774-1776

1992

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Characterization of oxide trap and interface trap creation during hot-carrier stressing of n-MOS transistors using the floating-gate technique

IEEE electron device letters, 1993-02, Vol.14 (2), p.63-65

1993

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Extrapolation of DC device lifetime in body-floating and body-grounded SOI MOSFETS

1997 IEEE International SOI Conference Proceedings, 1997, p.178-179

1997

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Impact of snapback-induced hole injection on gate oxide reliability of N-MOSFETs

IEEE electron device letters, 1990-10, Vol.11 (10), p.460-462

1990

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A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistors

IEEE electron device letters, 1991-04, Vol.12 (4), p.178-180

1991

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Comparison of shallow trench and LOCOS isolation for hot-carrier resistance

IEEE electron device letters, 1991-12, Vol.12 (12), p.673-675

1991

Volltextzugriff (PDF)

A general gate-current p-MOS lifetime prediction method applicable to different channel structures

IEEE electron device letters, 1990-11, Vol.11 (11), p.547-548

1990

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The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors

A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices

The characterization of hot carrier damage in p-channel transistors

Examination of gradual-junction p-MOS structures for hot carrier control using a new lifetime extraction method

Sub-500-ps 64-b ALUs in 0.18-μm SOI/bulk CMOS: design and scaling trends

AC versus DC hot-carrier degradation in n-channel MOSFETs

Sub-500-ps 64-b ALUs in 0.18-[micro]m SOI/bulk CMOS: design and scaling trends

Sub-500-ps 64-b ALUs in 0.18-/spl mu/m SOI/bulk CMOS: design and scaling trends

Parasitic bipolar gain reduction and the optimization of 0.25-μm partially depleted SOI MOSFETs

DC and transient characterization of a compact Schottky body contact technology for SOI transistors

Parasitic bipolar gain reduction and the optimization of 0.25-/spl mu/m partially depleted SOI MOSFETs

Transient measurements of SOI body contact effectiveness

Analysis of gate oxide thickness hot carrier effects in surface channel P-MOSFET's

Circuit design guidelines for n-channel MOSFET hot carrier robustness

Anomalous hot-carrier behavior for LDD p-channel transistors

New hot carrier failure criterion for p-channel transistors based on transistor leakage currents

Examination of oxide damage during high-current stress of n-MOS transistors

Hot-carrier stress damage in the gate 'off' state in n-channel transistors

Characterization of oxide trap and interface trap creation during hot-carrier stressing of n-MOS transistors using the floating-gate technique

Extrapolation of DC device lifetime in body-floating and body-grounded SOI MOSFETS

Impact of snapback-induced hole injection on gate oxide reliability of N-MOSFETs

A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistors

Comparison of shallow trench and LOCOS isolation for hot-carrier resistance

A general gate-current p-MOS lifetime prediction method applicable to different channel structures

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