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9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9),Ameliowka, Poland,2008-06-15 - 2008-06-20, 2009-10, Vol.78 (10), p.S116-S119

2009

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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.122-127

2009

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Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si: local vibrational mode studies

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2237-S2246

2005

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Stress dependent structure of annealed nitrogen-doped Cz-Si

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-10, Vol.134 (2), p.218-221

2006

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Defect-related light emission from processed He-implanted silicon

Journal of luminescence, 2006-12, Vol.121 (2), p.383-386

2006

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Revealing the structural disturbances in Czochralski silicon by high temperature–pressure treatment

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.64-68

2005

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Effect of annealing under enhanced hydrostatic pressure on the microstructure of Cz–Si:H, He

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.205-211

2005

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Structural characterisation of self-implanted Si after HT-HP treatment

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.170-173

2005

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Effect of pressure annealing on formation of light-emitting Si nanocrystals in Si rich SiO2

Physica status solidi. A, Applications and materials science, 2009-01, Vol.206 (1), p.78-83

2009

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Structural characterization of InxGa1-xAs/Inp layers under different stresses

Applied surface science, 2006-10, Vol.253 (1), p.261-265

2006

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Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.263-268

2008

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Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

Radiation measurements, 2007-04, Vol.42 (4), p.688-692

2007

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Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures

physica status solidi (b), 2003-01, Vol.235 (1), p.75-78

2003

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Characterizing bedforms in shallow seas as an integrative predictor of seafloor stability and the occurrence of macrozoobenthic species

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Effect of annealing under stress on defect structure of Si–Ge

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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si

Thermal double donor annihilation and oxygen precipitation at around 650 °C in Czochralski-grown Si: local vibrational mode studies

Stress dependent structure of annealed nitrogen-doped Cz-Si

Defect-related light emission from processed He-implanted silicon

Revealing the structural disturbances in Czochralski silicon by high temperature–pressure treatment

Effect of annealing under enhanced hydrostatic pressure on the microstructure of Cz–Si:H, He

Structural characterisation of self-implanted Si after HT-HP treatment

Effect of pressure annealing on formation of light-emitting Si nanocrystals in Si rich SiO2

Structural characterization of InxGa1-xAs/Inp layers under different stresses

Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing

Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures

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