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Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

Semiconductor science and technology, 2006-10, Vol.21 (10), p.1402-1407

2006

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Generalized convolutions and the Levi-Civita functional equation

Aequationes mathematicae, 2018-10, Vol.92 (5), p.911-933

Misiewicz, J. K.

2018

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Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations

Review of scientific instruments, 2009-09, Vol.80 (9), p.096103-096103

2009

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Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells

Journal of applied physics, 2014-12, Vol.116 (23)

2014

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Management of Helicobacter pylori-related disorders

European journal of gastroenterology & hepatology, 2012-04, Vol.9 Suppl 1, p.S17-S21

Misiewicz, J J

2012

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Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

Optics express, 2017-12, Vol.25 (25), p.31122-31129

2017

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Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

Journal of applied physics, 2015-10, Vol.118 (15)

2015

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Ion-ion interactions in β-NaGdF4:Yb(3+),Er(3+) nanocrystals--the effect of ion concentration and their clustering

Nanoscale, 2015-08, Vol.7 (32), p.13784-13792

2015

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Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range

Applied physics letters, 2018-01, Vol.112 (5)

2018

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On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

Nanoscale research letters, 2011-01, Vol.6 (1), p.106-106, Article 106

2011

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Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain

Journal of applied physics, 2016-06, Vol.119 (21)

2016

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Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µm

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Eight-band k.p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Applied physics letters, 2016-04, Vol.108 (16)

2016

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Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

Applied physics letters, 2018-05, Vol.112 (22)

2018

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Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Enhanced photoluminescence stability of CdS nanocrystals through a zinc acetate reagent

RSC advances, 2018-01, Vol.8 (45), p.25417-25422

2018

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Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films

Nanotechnology, 2009-12, Vol.20 (48), p.485703-485703

2009

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Single photon emission at 1.55 μ m from charged and neutral exciton confined in a single quantum dash

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Opto-electronics review, 2012, Vol.20 (2), p.101-119

2012

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Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

Generalized convolutions and the Levi-Civita functional equation

Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations

Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells

Management of Helicobacter pylori-related disorders

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

Ion-ion interactions in β-NaGdF4:Yb(3+),Er(3+) nanocrystals--the effect of ion concentration and their clustering

Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range

On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µm

Eight-band k.p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance

Enhanced photoluminescence stability of CdS nanocrystals through a zinc acetate reagent

Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films

Single photon emission at 1.55 μ m from charged and neutral exciton confined in a single quantum dash

Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

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