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High-power AlGaN/GaN HEMTs for Ka-band applications

IEEE electron device letters, 2005-11, Vol.26 (11), p.781-783

2005

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IEEE_Xplore

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

IEEE electron device letters, 2006-09, Vol.27 (9), p.713-715

2006

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IEEE_Xplore

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Applied physics letters, 2016-03, Vol.108 (11)

2016

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SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

Scientific reports, 2020-07, Vol.10 (1), p.12099-12099, Article 12099

2020

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Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2011-11, Vol.99 (22), p.223501-223501-3

2011

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Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2008-03, Vol.310 (6), p.1124-1131

2008

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Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

Journal of applied physics, 2007-10, Vol.102 (8), p.083546-083546-6

2007

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Growth of high quality N-polar AlN ( 000 1 ¯ ) on Si(111) by plasma assisted molecular beam epitaxy

Applied physics letters, 2009-04, Vol.94 (15), p.151906-151906-3

2009

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High-performance E-mode AlGaN/GaN HEMTs

IEEE electron device letters, 2006-06, Vol.27 (6), p.428-430

2006

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IEEE_Xplore

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Applied physics letters, 2010-07, Vol.97 (2), p.023503-023503-3

2010

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Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

Journal of applied physics, 2013-10, Vol.114 (16)

2013

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High quality AlN grown on SiC by metal organic chemical vapor deposition

Applied physics letters, 2008-11, Vol.93 (19), p.191906-191906-3

2008

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Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Journal of applied physics, 2016-01, Vol.119 (1)

2016

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Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Applied physics letters, 2012-05, Vol.100 (19), p.193507-193507-4

2012

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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Applied physics letters, 2000-07, Vol.77 (2), p.250-252

2000

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Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

Journal of applied physics, 2008-02, Vol.103 (3), p.033708-033708-4

2008

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Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

Applied physics letters, 2004-11, Vol.85 (22), p.5143-5145

2004

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Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Applied physics letters, 2014-08, Vol.105 (6)

2014

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Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

IEEE electron device letters, 2006-04, Vol.27 (4), p.205-207

2006

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IEEE_Xplore

AlGaN/AlN/GaN high-power microwave HEMT

IEEE electron device letters, 2001-10, Vol.22 (10), p.457-459

2001

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IEEE_Xplore

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Applied physics letters, 2012-03, Vol.100 (11), p.112106-112106-4

2012

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Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

Applied physics letters, 2010-03, Vol.96 (13), p.133503-133503-3

2010

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In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge

Applied physics letters, 2014-06, Vol.104 (26)

2014

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The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

IEEE electron device letters, 2009-03, Vol.30 (3), p.209-212

2009

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IEEE_Xplore

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

Journal of applied physics, 2008-11, Vol.104 (9), p.093510-093510-6

2008

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High-power AlGaN/GaN HEMTs for Ka-band applications

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

Growth of high quality N-polar AlN ( 000 1 ¯ ) on Si(111) by plasma assisted molecular beam epitaxy

High-performance E-mode AlGaN/GaN HEMTs

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

High quality AlN grown on SiC by metal organic chemical vapor deposition

Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

AlGaN/AlN/GaN high-power microwave HEMT

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

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