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Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.168-170

2015

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Power-generation performance of lead-free (K,Na)NbO3 piezoelectric thin-film energy harvesters

Sensors and actuators. A. Physical., 2012-06, Vol.179, p.132-136

2012

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Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio

Japanese Journal of Applied Physics, 2016-06, Vol.55 (6), p.61101

2016

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Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1012

2023

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High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p--n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Japanese Journal of Applied Physics, 2013-02, Vol.52 (2), p.028007-028007-3

2013

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Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD02

2019

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Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1059

2022

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Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.41002-1-041002-7

2015

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Impact of damage-free wet etching process on fabrication of high breakdown voltage GaN p-n junction diodes

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD05

2019

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Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD12

2021

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Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Journal of crystal growth, 2010-12, Vol.312 (24), p.3569-3573

2010

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Over 1.0 kV GaN p-n junction diodes on free-standing GaN substrates

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1535-1537

2011

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Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6), p.61001

2017

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Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Electrical characteristics of Au/Ni Schottky diodes on cleaved m-plane surfaces of free-standing n-GaN substrates

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Effect of Surface Treatment in Au/Ni/ n-GaN Schottky Contacts Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Substrates

Journal of the Society of Materials Science, Japan, 2022/10/15, Vol.71(10), pp.819-823

2022

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Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Journal of crystal growth, 2008-01, Vol.310 (1), p.5-7

2008

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Alternating current operation of low-Mg-doped p-GaN Schottky diodes

Thin solid films, 2014-04, Vol.557, p.258-261

2014

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Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2110-2112

2011

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Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

Japanese Journal of Applied Physics, 2023-12, Vol.62 (12), p.128003

2023

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Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1979-1985

2011

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Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock

Japanese Journal of Applied Physics, 2022-11, Vol.61 (11), p.118002

2022

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Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Power-generation performance of lead-free (K,Na)NbO3 piezoelectric thin-film energy harvesters

Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates

Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height

Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio

Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p--n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Scanning internal photoemission microscopy measurements of n-GaN Schottky contacts under applying voltage

Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes

Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

Impact of damage-free wet etching process on fabrication of high breakdown voltage GaN p-n junction diodes

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Over 1.0 kV GaN p-n junction diodes on free-standing GaN substrates

Wafer-level nondestructive inspection of substrate off-angle and net donor concentration of the n−-drift layer in vertical GaN-on-GaN Schottky diodes

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy

Electrical characteristics of Au/Ni Schottky diodes on cleaved m-plane surfaces of free-standing n-GaN substrates

Effect of Surface Treatment in Au/Ni/ n-GaN Schottky Contacts Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Substrates

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Alternating current operation of low-Mg-doped p-GaN Schottky diodes

Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy

Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates

Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock

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