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Preparation and characterization of polypropylene-montmorillonite nanocomposites generated by in situ metallocene catalyst polymerization

Journal of applied polymer science, 2005-03, Vol.95 (5), p.1228-1236

2005

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The characterization of organic modified clay and clay-filled PMMA nanocomposite

Journal of applied polymer science, 2002-02, Vol.83 (8), p.1702-1710

2002

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Polyhedral oligomeric silsequioxane monolayer as a nanoporous interlayer for preparation of low-k dielectric films

Nanotechnology, 2007-06, Vol.18 (22), p.225701-225701 (5)

2007

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High performance BCB-bridged AlGaAs/InGaAs power HFETs

IEEE transactions on electron devices, 2003-06, Vol.50 (6), p.1532-1536

2003

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A novel double-recessed 0.2-μm T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

IEEE electron device letters, 2003-06, Vol.24 (6), p.381-383

2003

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K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

IEEE electron device letters, 2004-05, Vol.25 (5), p.253-255

2004

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A study of the effect of surfactants on the properties of polystyrene-montmorillonite nanocomposites

Polymer engineering and science, 2003-01, Vol.43 (1), p.214-222

2003

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0.2-μm gate-length InGaP-InGaAs DCFETs for c-band MMIC amplifier applications

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599-1603

2003

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Ultra-Low-k Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites via Covalent Layer-by-Layer Assembly

Journal of nanoscience and nanotechnology, 2009-03, Vol.9 (3), p.1839-1843

2009

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Submicron RIE recessed InGaP/InGaAs doped-channel FETs

IEEE transactions on electron devices, 2003-06, Vol.50 (6), p.1555-1558, Article 1555

2003

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Synthesis and properties of polystyrene-montmorillonite nanocomposites by suspension polymerization

Journal of applied polymer science, 2004-01, Vol.91 (1), p.101-109

2004

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Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Japanese Journal of Applied Physics, 2004-01, Vol.43 (1), p.111-112

2004

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Synthesis and application of functional polyethylene graft copolymers by atom transfer radical polymerization

Journal of organometallic chemistry, 2005-12, Vol.690 (26), p.6300-6308

2005

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Characterization of dielectric barium titanate powders prepared by homogeneous precipitation chemical reaction for embedded capacitor applications

Materials research bulletin, 2005-10, Vol.40 (10), p.1662-1679

2005

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Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer

Japanese Journal of Applied Physics, 1998-12, Vol.37 (12A), p.L1437

1998

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High linearity low-k BCB-bridged AlGaAs/InGaAs power HFETs

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.1, p.521-524 vol.1

2002

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Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.382-385

2004

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High linearity low-k BCB-bridged AlGaAs/InGaAs power HFETs

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280), 2002, p.411-414

2002

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Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-07, Vol.22 (4), p.1723-1726

2004

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0.2-[mu]m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599

2003

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0.2-mum gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599-1603

2003

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0.2-/spl mu/m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599-1603

2003

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A novel double-recessed 0.2-mum T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

IEEE electron device letters, 2003-06, Vol.24 (6), p.381-383

2003

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A novel double-recessed 0.2-[micro]m T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

IEEE electron device letters, 2003-06, Vol.24 (6), p.381

2003

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Enhanced power performance of enhancement-mode Al sub(0.5)Ga sub(0.5)As/In sub(0.15 )Ga sub(0.85)As pHEMTs using a low-k BCB passivation

IEEE electron device letters, 2002-05, Vol.23 (5), p.243-245

2002

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Preparation and characterization of polypropylene-montmorillonite nanocomposites generated by in situ metallocene catalyst polymerization

The characterization of organic modified clay and clay-filled PMMA nanocomposite

Polyhedral oligomeric silsequioxane monolayer as a nanoporous interlayer for preparation of low-k dielectric films

High performance BCB-bridged AlGaAs/InGaAs power HFETs

A novel double-recessed 0.2-μm T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

A study of the effect of surfactants on the properties of polystyrene-montmorillonite nanocomposites

0.2-μm gate-length InGaP-InGaAs DCFETs for c-band MMIC amplifier applications

Ultra-Low-k Thin Films of Polyhedral Oligomeric Silsesquioxane/Epoxy Nanocomposites via Covalent Layer-by-Layer Assembly

Submicron RIE recessed InGaP/InGaAs doped-channel FETs

Synthesis and properties of polystyrene-montmorillonite nanocomposites by suspension polymerization

Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Synthesis and application of functional polyethylene graft copolymers by atom transfer radical polymerization

Characterization of dielectric barium titanate powders prepared by homogeneous precipitation chemical reaction for embedded capacitor applications

Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer

High linearity low-k BCB-bridged AlGaAs/InGaAs power HFETs

Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayer

High linearity low-k BCB-bridged AlGaAs/InGaAs power HFETs

Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication

0.2-[mu]m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

0.2-mum gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

0.2-/spl mu/m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications

A novel double-recessed 0.2-mum T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

A novel double-recessed 0.2-[micro]m T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication

Enhanced power performance of enhancement-mode Al sub(0.5)Ga sub(0.5)As/In sub(0.15 )Ga sub(0.85)As pHEMTs using a low-k BCB passivation

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