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A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1073-1079

2006

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Handbook of Integrated Circuit Industry

1, 2023

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The AtMKK3 pathway mediates ABA and salt signaling in Arabidopsis

Acta physiologiae plantarum, 2008-05, Vol.30 (3), p.277-286

2008

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Elimination of Tungsten-voids in middle-of-line contacts for advanced planar CMOS and FinFET technology

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016, p.160-163

2016

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Technologies for Superior Reliability in SiC Power Devices

2023 China Semiconductor Technology International Conference (CSTIC), 2023, p.1-4

Chi, Min-Hwa

2023

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Reduction of “Dark-Gate” defects in replacement-metal-gate process and middle-of-line contacts for advanced planar CMOS and FinFET technology

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016, p.330-334

2016

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IC Technologies and Systems for Green Future

2022 China Semiconductor Technology International Conference (CSTIC), 2022, p.1-5

Chi, Min-Hwa

2022

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Handbook of Integrated Circuit Industry

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FinFET technology: Overview and status at 14nm node and beyond

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-3

Min-hwa Chi

2016

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Smart Manufacturing for Si, SiC, and GaN Power Devices in AI Era

2021 China Semiconductor Technology International Conference (CSTIC), 2021, p.1-5

Chi, Min-hwa

2021

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Impact of Topology of Trench Gate Bottom Corner for Power Mosfet and IGBT

2022 China Semiconductor Technology International Conference (CSTIC), 2022, p.1-4

2022

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Smart IC technologies for smart devices in IoT applications

2018 China Semiconductor Technology International Conference (CSTIC), 2018, p.1-4

Chi, Min-hwa

2018

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Fixation of hybrid vigor in rice: opportunities and challenges

Euphytica, 2008-04, Vol.160 (3), p.287-293

2008

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Fast Development of High-performance ICs in AI/IoT Era

2019 China Semiconductor Technology International Conference (CSTIC), 2019, p.1-4

2019

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Fast Development of IC Technologies in AI and IoT Era

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2018, p.1-4

2018

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High Yield, Superior Quality and Reliability of IGBT and Power Devices in the Artificial Intelligence Era

2020 China Semiconductor Technology International Conference (CSTIC), 2020, p.1-5

2020

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Elimination of Tungsten-voids in middle-of-line contacts for advanced planar CMOS AND FinFET technology

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-4

2016

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Plasma charging defect characterization, inspection, and monitors in poly-buffered STI

IEEE transactions on semiconductor manufacturing, 2002-11, Vol.15 (4), p.478-485

2002

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Reduction of "dark gate" defects in replacement-metal-gate process and middle-of-line contacts for advanced planar CMOS and FinFET technology

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-4

2016

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Advanced logic and specialty technologies for VLSI manufacturing in fast expansion at China

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-4

2017

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Technologies and materials for memory with full compatibility to CMOS

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.823-826

2008

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Introduction of 95nm SPOCULL technology

2018 China Semiconductor Technology International Conference (CSTIC), 2018, p.1-4

2018

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Reliability of HfSiON as gate dielectric for advanced CMOS technology

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.170-171

2005

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Low voltage NVG(TM): a new high performance 3 V/5 V flash technology for portable computing and telecommunications applications

IEEE transactions on electron devices, 1996-09, Vol.43 (9), p.1510-1517

1996

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Second breakdown of vertical power MOSFET's

IEEE transactions on electron devices, 1982-08, Vol.29 (8), p.1287-1293

1982

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A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

Handbook of Integrated Circuit Industry

The AtMKK3 pathway mediates ABA and salt signaling in Arabidopsis

Elimination of Tungsten-voids in middle-of-line contacts for advanced planar CMOS and FinFET technology

Technologies for Superior Reliability in SiC Power Devices

Reduction of “Dark-Gate” defects in replacement-metal-gate process and middle-of-line contacts for advanced planar CMOS and FinFET technology

IC Technologies and Systems for Green Future

Handbook of Integrated Circuit Industry

FinFET technology: Overview and status at 14nm node and beyond

Smart Manufacturing for Si, SiC, and GaN Power Devices in AI Era

Impact of Topology of Trench Gate Bottom Corner for Power Mosfet and IGBT

Smart IC technologies for smart devices in IoT applications

Fixation of hybrid vigor in rice: opportunities and challenges

Fast Development of High-performance ICs in AI/IoT Era

Fast Development of IC Technologies in AI and IoT Era

High Yield, Superior Quality and Reliability of IGBT and Power Devices in the Artificial Intelligence Era

Elimination of Tungsten-voids in middle-of-line contacts for advanced planar CMOS AND FinFET technology

Plasma charging defect characterization, inspection, and monitors in poly-buffered STI

Reduction of "dark gate" defects in replacement-metal-gate process and middle-of-line contacts for advanced planar CMOS and FinFET technology

Advanced logic and specialty technologies for VLSI manufacturing in fast expansion at China

Technologies and materials for memory with full compatibility to CMOS

Introduction of 95nm SPOCULL technology

Reliability of HfSiON as gate dielectric for advanced CMOS technology

Low voltage NVG(TM): a new high performance 3 V/5 V flash technology for portable computing and telecommunications applications

Second breakdown of vertical power MOSFET's

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