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FinFET With High- \kappa Spacers for Improved Drive Current

IEEE electron device letters, 2016-07, Vol.37 (7), p.835-838

2016

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Bulk FinFET With Low- \kappa Spacers for Continued Scaling

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1861-1864

2017

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FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits

IEEE electron device letters, 2017-01, Vol.38 (1), p.16-19

2017

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Investigation of strain‐induced phase transformation in ferroelectric transistor using metal‐nitride gate electrode

Physica status solidi. PSS-RRL. Rapid research letters, 2017-03, Vol.11 (3), p.1600368-n/a

2017

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Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors

Nanoscale horizons, 2019-05, Vol.4 (3), p.683-688

2019

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SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2367-2373

2016

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The effects of immersive garden experience on the health care to elderly residents with mild-to-moderate cognitive impairment living in nursing homes after the COVID-19 pandemic

Landscape and ecological engineering, 2022-01, Vol.18 (1), p.45-56

2022

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Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs

IEICE transactions on electronics, 2019-06, Vol.E102.C (6), p.429-434

2019

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Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma

Nano energy, 2016-12, Vol.30, p.846-852

2016

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Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

IEEE journal of the Electron Devices Society, 2016-09, Vol.4 (5), p.286-293

2016

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Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory

IEEE electron device letters, 2015-02, Vol.36 (2), p.135-137

2015

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A CMOS-compatible poly-Si nanowire device with hybrid sensor/memory characteristics for System-on-Chip applications

Sensors (Basel, Switzerland), 2012-04, Vol.12 (4), p.3952-3963

2012

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Nationwide epidemiology and prognosis of dialysis-requiring acute kidney injury (NEP-AKI-D) study: Design and methods

Nephrology (Carlton, Vic.), 2016-09, Vol.21 (9), p.758-764

2016

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One-transistor ferroelectric versatile memory: Strained-gate engineering for realizing energy-efficient switching and fast negative-capacitance operation

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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A sensitive and selective magnetic graphene composite-modified polycrystalline-silicon nanowire field-effect transistor for bladder cancer diagnosis

Biosensors & bioelectronics, 2015-04, Vol.66, p.198-207

2015

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A 3-D Stackable Maskless Embedded Metal-Gate Thin-Film-Transistor Nanowire for Use in Bioelectronic Probing

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.897-901

2014

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Sub-60mV-swing negative-capacitance FinFET without hysteresis

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.22.6.1-22.6.4

2015

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A Comparative Study of NBTI and RTN Amplitude Distributions in High- \kappa Gate Dielectric pMOSFETs

IEEE electron device letters, 2012-02, Vol.33 (2), p.176-178

2012

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MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density

IEEE electron device letters, 2012-04, Vol.33 (4), p.591-593

2012

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

Applied physics letters, 2013-12, Vol.103 (25)

2013

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32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display

SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.377-380

2022

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A Si-based bulk FinFET by novel etching process with mask-less and photoresist-free lithography technique

International journal of nanotechnology., 2015-01, Vol.12 (1/2), p.87

2015

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FinFET With High- \kappa Spacers for Improved Drive Current

Bulk FinFET With Low- \kappa Spacers for Continued Scaling

FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits

Investigation of strain‐induced phase transformation in ferroelectric transistor using metal‐nitride gate electrode

Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors

SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory

The effects of immersive garden experience on the health care to elderly residents with mild-to-moderate cognitive impairment living in nursing homes after the COVID-19 pandemic

Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs

Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing

Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma

Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure

Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory

A CMOS-compatible poly-Si nanowire device with hybrid sensor/memory characteristics for System-on-Chip applications

Nationwide epidemiology and prognosis of dialysis-requiring acute kidney injury (NEP-AKI-D) study: Design and methods

One-transistor ferroelectric versatile memory: Strained-gate engineering for realizing energy-efficient switching and fast negative-capacitance operation

A sensitive and selective magnetic graphene composite-modified polycrystalline-silicon nanowire field-effect transistor for bladder cancer diagnosis

A 3-D Stackable Maskless Embedded Metal-Gate Thin-Film-Transistor Nanowire for Use in Bioelectronic Probing

Sub-60mV-swing negative-capacitance FinFET without hysteresis

A Comparative Study of NBTI and RTN Amplitude Distributions in High- \kappa Gate Dielectric pMOSFETs

MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display

A Si-based bulk FinFET by novel etching process with mask-less and photoresist-free lithography technique

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