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Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator

Organic electronics, 2019-08, Vol.71, p.7-13

2019

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Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal-Ferroelectric-Insulator-Semiconductor Capacitors

IEEE electron device letters, 2019-07, Vol.40 (7), p.1032-1035

2019

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Effects of Oxidants on the Bias-Stress Instabilities of In-Ga-Zn-O Thin Film Transistors Using HfO2 Gate Insulator Prepared by Atomic Layer Deposition

IEEE electron device letters, 2020-03, Vol.41 (3), p.425-428

2020

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Advanced Electromaterials: New Challenges

Physica status solidi. A, Applications and materials science, 2022-10, Vol.219 (20), p.n/a

2022

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Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal-Ferroelectric-Metal-Insulator-Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.499-504

2020

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Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition

RSC advances, 2018-01, Vol.8 (44), p.2514-252

2018

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Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers

IEEE electron device letters, 2020-11, Vol.41 (11), p.1661-1664

2020

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Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor

Applied physics letters, 2010-11, Vol.97 (18), p.183502-183502-3

2010

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Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

ACS applied materials & interfaces, 2017-07, Vol.9 (27), p.22676-22684

2017

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Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps

Electronic Materials Letters, 2021, 17(6), , pp.485-492

2021

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A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors

IEEE electron device letters, 2020-03, Vol.41 (3), p.393-396

2020

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Film thickness-dependent ferroelectric polarization switching dynamics of undoped HfO2 thin films prepared by atomic layer deposition

Ceramics international, 2019-12, Vol.45 (17), p.22642-22648

2019

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Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6159-6165

2021

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Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

IEEE electron device letters, 2024-03, Vol.45 (3), p.404-407

2024

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High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

Advanced materials (Weinheim), 2009-11, Vol.21 (42), p.4287-4291

2009

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Interrelation between ferroelectric properties and defects based on low-frequency noise analysis of HZO ferroelectric capacitor

Applied physics letters, 2023-04, Vol.122 (16)

2023

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Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1

2023

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Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process

Physica status solidi. A, Applications and materials science, 2021-05, Vol.218 (10), p.n/a

2021

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Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes

Current Applied Physics, 2019, 19(12), , pp.1383-1390

2019

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Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

IEEE electron device letters, 2020-02, Vol.41 (2), p.232-235

2020

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Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

IEEE electron device letters, 2017-10, Vol.38 (10), p.1387-1389

2017

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Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1839-1844

2024

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Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In-Ga-ZnO Thin Films as Both Charge Trap and Active Channel Layers

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3128-3134

2016

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Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Electronic Materials Letters, 2022, 18(3), , pp.294-303

2022

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Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-01, Vol.37 (1)

2019

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Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator

Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal-Ferroelectric-Insulator-Semiconductor Capacitors

Effects of Oxidants on the Bias-Stress Instabilities of In-Ga-Zn-O Thin Film Transistors Using HfO2 Gate Insulator Prepared by Atomic Layer Deposition

Advanced Electromaterials: New Challenges

Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal-Ferroelectric-Metal-Insulator-Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films

Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition

Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers

Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps

A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors

Film thickness-dependent ferroelectric polarization switching dynamics of undoped HfO2 thin films prepared by atomic layer deposition

Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions

Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel

High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

Interrelation between ferroelectric properties and defects based on low-frequency noise analysis of HZO ferroelectric capacitor

Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric

Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process

Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium–tin–oxide electrodes

Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Process Optimization and Device Characterization of Nonvolatile Charge Trap Memory Transistors Using In-Ga-ZnO Thin Films as Both Charge Trap and Active Channel Layers

Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate

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