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Disease variant prediction with deep generative models of evolutionary data

Nature (London), 2021-11, Vol.599 (7883), p.91-95

2021

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Mapping transcriptomic vector fields of single cells

Cell, 2022-02, Vol.185 (4), p.690-711.e45

2022

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Lineage tracing reveals the phylodynamics, plasticity, and paths of tumor evolution

Cell, 2022-05, Vol.185 (11), p.1905-1923.e25

2022

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An in silico method to assess antibody fragment polyreactivity

Nature communications, 2022-12, Vol.13 (1), p.7554-7554, Article 7554

2022

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Coordination of bacterial cell wall and outer membrane biosynthesis

Nature (London), 2023-03, Vol.615 (7951), p.300-304

2023

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Modular, efficient and constant-memory single-cell RNA-seq preprocessing

Nature biotechnology, 2021-07, Vol.39 (7), p.813-818

2021

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Publisher Correction: Disease variant prediction with deep generative models of evolutionary data

Nature (London), 2022-01, Vol.601 (7892), p.E7-E7

2022

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Low-cost, scalable, and automated fluid sampling for fluidics applications

HardwareX, 2021-10, Vol.10, p.e00201-e00201, Article e00201

2021

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Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications

Applied physics letters, 2006-02, Vol.88 (7)

2006

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Unaltered Tonic Inhibition in the Arcuate Nucleus of Diet-induced Obese Mice

Experimental Neurobiology, 2022, 31(3), , pp.147-157

2022

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Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications

Journal of applied physics, 2008-05, Vol.103 (9)

2008

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Generation of Astrocyte-Specific MAOB Conditional Knockout Mouse with Minimal Tonic GABA Inhibition

Experimental Neurobiology, 2022, 31(3), , pp.158-172

2022

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Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

Applied physics letters, 2009-04, Vol.94 (14)

2009

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Electrical conduction mechanism in high-dielectric-constant (Ba0.5,Sr0.5)TiO3 thin films

Applied physics letters, 2002-01, Vol.80 (4), p.655-657

2002

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Temperature dependence of the current conduction mechanisms in ferroelectric Pb(Zr0.53,Ti0.47)O3 thin films

Journal of applied physics, 2004-03, Vol.95 (6), p.3120-3125

2004

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Cerebellar anaplastic pilocytic astrocytoma in a patient of neurofibromatosis type-1: Case report and review of the literature

Clinical neurology and neurosurgery, 2012-09, Vol.114 (7), p.1027-1029

2012

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Metadata retrieval from sequence databases with ffq

Bioinformatics (Oxford, England), 2023-01, Vol.39 (1)

2023

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Fabrication and characterization of metal-ferroelectric ( PbZr 0.6 Ti 0.4 O 3 ) -insulator ( La 2 O 3 ) -semiconductor capacitors for nonvolatile memory applications

Journal of applied physics, 2009-03, Vol.105 (6), p.061625-061625-5

2009

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Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric

Applied physics letters, 2009-10, Vol.95 (16)

2009

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The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors

Journal of applied physics, 2005-08, Vol.98 (4), p.044103-044103-6

2005

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Electrical conduction mechanisms of metal∕La2O3∕Si structure

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Leakage currents in amorphous Ta2O5 thin films

Journal of applied physics, 1997-05, Vol.81 (10), p.6911-6915

1997

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The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment

Applied physics letters, 2007-11, Vol.91 (19)

2007

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The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications

Journal of applied physics, 2000-02, Vol.87 (4), p.1841-1843

2000

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Electrical characterization of metal-oxide-high- k dielectric-oxide-semiconductor (MOHOS) structures for memory applications

Microelectronics and reliability, 2007-04, Vol.47 (4), p.606-609

2007

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Disease variant prediction with deep generative models of evolutionary data

Mapping transcriptomic vector fields of single cells

Lineage tracing reveals the phylodynamics, plasticity, and paths of tumor evolution

An in silico method to assess antibody fragment polyreactivity

Coordination of bacterial cell wall and outer membrane biosynthesis

Modular, efficient and constant-memory single-cell RNA-seq preprocessing

Publisher Correction: Disease variant prediction with deep generative models of evolutionary data

Low-cost, scalable, and automated fluid sampling for fluidics applications

Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications

Unaltered Tonic Inhibition in the Arcuate Nucleus of Diet-induced Obese Mice

Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications

Generation of Astrocyte-Specific MAOB Conditional Knockout Mouse with Minimal Tonic GABA Inhibition

Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

Electrical conduction mechanism in high-dielectric-constant (Ba0.5,Sr0.5)TiO3 thin films

Temperature dependence of the current conduction mechanisms in ferroelectric Pb(Zr0.53,Ti0.47)O3 thin films

Cerebellar anaplastic pilocytic astrocytoma in a patient of neurofibromatosis type-1: Case report and review of the literature

Metadata retrieval from sequence databases with ffq

Fabrication and characterization of metal-ferroelectric ( PbZr 0.6 Ti 0.4 O 3 ) -insulator ( La 2 O 3 ) -semiconductor capacitors for nonvolatile memory applications

Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric

The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors

Electrical conduction mechanisms of metal∕La2O3∕Si structure

Leakage currents in amorphous Ta2O5 thin films

The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment

The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications

Electrical characterization of metal-oxide-high- k dielectric-oxide-semiconductor (MOHOS) structures for memory applications

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