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Monolithic growth of ultrathin Ge nanowires on Si(001)

Physical review letters, 2012-08, Vol.109 (8), p.085502-085502, Article 085502

2012

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Strain engineering in Ge/GeSn core/shell nanowires

Applied physics letters, 2019-09, Vol.115 (11)

2019

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Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Physical chemistry chemical physics : PCCP, 2022-10, Vol.24 (39), p.24487-24494

2022

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Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

Materials & design, 2021-10, Vol.208, p.109833, Article 109833

2021

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Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires

Nano letters, 2016-12, Vol.16 (12), p.7930-7936

2016

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GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Journal of applied physics, 2016-02, Vol.119 (5)

2016

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Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer

Physical review letters, 2012-02, Vol.108 (5), p.055503-055503, Article 055503

2012

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Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

Surface science reports, 2013-11, Vol.68 (3-4), p.390-417

2013

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Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates

Physical review letters, 2009-01, Vol.102 (2), p.025502-025502, Article 025502

2009

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n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

IEEE electron device letters, 2010-10, Vol.31 (10), p.1083-1085

2010

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Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/In x Ga 1-x P Core-Shell Nanowires

Nano letters, 2016-12, Vol.16 (12), p.7930-7936

2016

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Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning

Nanotechnology, 2016-10, Vol.27 (42), p.425301-425301

2016

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Strain release management in SiGe/Si films by substrate patterning

Applied physics letters, 2014-12, Vol.105 (24)

2014

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One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)

Physical review letters, 2012-07, Vol.109 (2), p.025505-025505, Article 025505

2012

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Semiconductor Superlattices and Interfaces: Proceedings of the International School of Physics «Enrico Fermi

2013

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Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing

Physical review letters, 2010-10, Vol.105 (16), p.166102-166102, Article 166102

2010

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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Nanoscale research letters, 2010-12, Vol.5 (12), p.1873-1877

2010

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Electronic properties of semiconducting silicides: fundamentals and recent predictions

Thin solid films, 2004-08, Vol.461 (1), p.141-147

2004

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Clinical and molecular delineation of a 16p13.2p13.13 microduplication

European journal of medical genetics, 2015-03, Vol.58 (3), p.194-198

2015

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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Nanoscale research letters, 2010-08, Vol.5 (12), p.1873-1877

2010

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A multiscale model of the plasma assisted deposition of crystalline silicon

Surface & coatings technology, 2007-09, Vol.201 (22), p.8863-8867

2007

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Integration of MOSFETs with SiGe dots as stressor material

Solid-state electronics, 2011-06, Vol.60 (1), p.75-83

2011

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A Measurement of Ω from the North American Test Flight of Boomerang

The Astrophysical journal, 2000-06, Vol.536 (2), p.L63-L66

2000

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Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires

Applied surface science, 2021-04, Vol.545, p.148948, Article 148948

2021

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Monolithic growth of ultrathin Ge nanowires on Si(001)

Strain engineering in Ge/GeSn core/shell nanowires

Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer

Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/In x Ga 1-x P Core-Shell Nanowires

Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning

Strain release management in SiGe/Si films by substrate patterning

One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)

Semiconductor Superlattices and Interfaces: Proceedings of the International School of Physics «Enrico Fermi

Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixing

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Electronic properties of semiconducting silicides: fundamentals and recent predictions

Clinical and molecular delineation of a 16p13.2p13.13 microduplication

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

A multiscale model of the plasma assisted deposition of crystalline silicon

Integration of MOSFETs with SiGe dots as stressor material

A Measurement of Ω from the North American Test Flight of Boomerang

Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires

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