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High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Applied physics letters, 2022-02, Vol.120 (6)

2022

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Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4875-4881

2017

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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light

Science China. Information sciences, 2023-02, Vol.66 (2), p.122401, Article 122401

2023

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Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1745-1752

2018

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Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP

IEEE electron device letters, 2017-10, Vol.38 (10), p.1421-1424

2017

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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

Chinese physics B, 2022-11, Vol.31 (11), p.117105-549

2022

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Enhanced gm and fT With High Johnson's Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

IEEE electron device letters, 2017-11, Vol.38 (11), p.1563-1566

2017

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Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4057-4064

2017

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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

Chinese physics B, 2023-03, Vol.32 (3), p.37303-535

2023

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Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

Applied physics letters, 2015-08, Vol.107 (6)

2015

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The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.39-45

2024

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Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Micromachines (Basel), 2023-07, Vol.14 (8), p.1513

2023

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Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.756-762

2021

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High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

中国物理B（英文版）, 2022, Vol.31 (2), p.613-618

2022

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InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.72-77

2023

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Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.474-480

2022

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The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB25

2019

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Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Chinese physics B, 2023-11, Vol.32 (12), p.127102

2023

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High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching

IEEE electron device letters, 2024-09, p.1-1

2024

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A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5553-5558

2021

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AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3308-3313

2021

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High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

IEEE electron device letters, 2018-06, Vol.39 (6), p.811-814

2018

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Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation

IEEE electron device letters, 2022-11, Vol.43 (11), p.1838-1841

2022

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The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4170-4174

2022

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High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

Enhanced gm and fT With High Johnson's Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs

The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching

A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Linearity Enhancement of AlGaN/GaN HEMTs With Selective-Area Charge Implantation

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

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