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Influence (Ce and Sm) co-doping ZnO nanorods on the structural, optical and electrical properties of the fabricated Schottky diode using chemical bath deposition

Journal of alloys and compounds, 2019-11, Vol.810, p.151929, Article 151929

2019

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Electrical characterization of Au/Ni Schottky contacts on GaN synthesized using electrodeposition

Semiconductor science and technology, 2023-04, Vol.38 (4), p.45005

2023

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Effects of thermal treatment on structural, optical and electrical properties of NiO thin films

Physica. B, Condensed matter, 2019-12, Vol.575, p.411694, Article 411694

2019

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DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC

Journal of materials science. Materials in electronics, 2022-07, Vol.33 (19), p.15679-15688

2022

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Effect of Isovalent Doping on Hydrogen Passivated Vacancy-oxygen Defect Complexes in Silicon: Insights from Density Functional Theory

SILICON, 2021-06, Vol.13 (6), p.1969-1977

2021

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Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-03, Vol.371, p.312-316

2016

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First-principles Study of the Impact of Hydrogen Passivation on the Charge State Transition Levels of the CiOi(Sii)n Defect Complexes in Silicon

SILICON, 2020-11, Vol.12 (11), p.2699-2704

2020

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Electrically active defects in p-type silicon after alpha-particle irradiation

Physica. B, Condensed matter, 2018-04, Vol.535, p.99-101

2018

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The carbon-substitutional–carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations

Computational materials science, 2016-06, Vol.118, p.338-341

2016

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Metastability of the boron-vacancy complex in silicon: Insights from hybrid functional calculations

Physical sciences reviews, 2019-10, Vol.3 (10)

2019

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Observation of low-temperature annealing of a primary defect in gallium nitride

Physica. B, Condensed matter, 2014-04, Vol.439, p.64-66

2014

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Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.40-47

2014

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Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Materials science forum, 2011-03, Vol.679-680, p.804-807

2011

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Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon

Materials science in semiconductor processing, 2020-05, Vol.110, p.104967, Article 104967

2020

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Properties of a previously unobserved donor-related electrically active defect in Ge induced by alpha particle irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-09, Vol.406, p.680-682

2017

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Deep-level transient spectroscopy of GaN grown by electrochemical deposition and irradiated with alpha particles

Materials science in semiconductor processing, 2021-06, Vol.127, p.105685, Article 105685

2021

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Ab initio study of metastability of Eu3+ defect complexes in GaN

Physica. B, Condensed matter, 2014-04, Vol.439, p.141-143

2014

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Density Functional Theory: Advances in Applications

1st edition., 2018

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Electric field effect on the emission of electron-irradiation-induced defects in n-GaAs

Japanese Journal of Applied Physics, 1994, Vol.33 (4A), p.1949-1953

1994

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Ab initio study of metastability of Eu super(3+) defect complexes in GaN

Physica. B, Condensed matter, 2014-04, Vol.439, p.141-143

2014

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Metastability of the boron-vacancy complex in silicon: Insights from hybrid functional calculations

Density Functional Theory, 2018, p.113-122

2018

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Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga 2 O 3 thin films grown by pulsed laser deposition

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.40-47

2014

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Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial [beta]-Ga sub(2)O sub(3) thin films grown by pulsed laser deposition

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.40-47

2014

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Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial [beta]-Ga2O3 thin films grown by pulsed laser deposition

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.40

2014

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Electrical Characterization of Gallium Nitride Thin Film Synthesized By Electrochemical Deposition Method

Meeting abstracts (Electrochemical Society), 2020-05, Vol.MA2020-01 (23), p.1360-1360

2020

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Influence (Ce and Sm) co-doping ZnO nanorods on the structural, optical and electrical properties of the fabricated Schottky diode using chemical bath deposition

Electrical characterization of Au/Ni Schottky contacts on GaN synthesized using electrodeposition

Effects of thermal treatment on structural, optical and electrical properties of NiO thin films

DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC

Effect of Isovalent Doping on Hydrogen Passivated Vacancy-oxygen Defect Complexes in Silicon: Insights from Density Functional Theory

Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

First-principles Study of the Impact of Hydrogen Passivation on the Charge State Transition Levels of the CiOi(Sii)n Defect Complexes in Silicon

Electrically active defects in p-type silicon after alpha-particle irradiation

The carbon-substitutional–carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations

Metastability of the boron-vacancy complex in silicon: Insights from hybrid functional calculations

Observation of low-temperature annealing of a primary defect in gallium nitride

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon

Properties of a previously unobserved donor-related electrically active defect in Ge induced by alpha particle irradiation

Deep-level transient spectroscopy of GaN grown by electrochemical deposition and irradiated with alpha particles

Ab initio study of metastability of Eu3+ defect complexes in GaN

Density Functional Theory: Advances in Applications

Electric field effect on the emission of electron-irradiation-induced defects in n-GaAs

Ab initio study of metastability of Eu super(3+) defect complexes in GaN

Metastability of the boron-vacancy complex in silicon: Insights from hybrid functional calculations

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga 2 O 3 thin films grown by pulsed laser deposition

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial [beta]-Ga sub(2)O sub(3) thin films grown by pulsed laser deposition

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial [beta]-Ga2O3 thin films grown by pulsed laser deposition

Electrical Characterization of Gallium Nitride Thin Film Synthesized By Electrochemical Deposition Method

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