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Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

Materials research bulletin, 2019-07, Vol.115, p.12-18

2019

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Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Materials science in semiconductor processing, 2018-06, Vol.79, p.53-60

2018

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Investigating the impact of physical vapour deposition of palladium on electron-irradiated silicon substrates

Physica. B, Condensed matter, 2024-07, Vol.685, p.415989, Article 415989

2024

Volltextzugriff (PDF)

Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes

Thin solid films, 2010-02, Vol.518 (9), p.2485-2488

2010

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Density functional theory calculation of monolayer WTe 2 transition metal dichalcogenides doped with H, Li and Be

Physica. B, Condensed matter, 2018-04, Vol.535, p.167-170

2018

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Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

Physica. B, Condensed matter, 2019-11, Vol.572, p.238-241

2019

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A hybrid functional calculation of Tm3+ defects in germanium (Ge)

Materials science in semiconductor processing, 2016-03, Vol.43, p.129-133

2016

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Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Materials science in semiconductor processing, 2019-11, Vol.103, p.104612, Article 104612

2019

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Defect levels induced by double substitution of B and N in 4H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-03, Vol.442, p.41-46

2019

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Electronic properties and defect levels induced by n/p-type defect-complexes in Ge

Materials science in semiconductor processing, 2022-11, Vol.150, p.106906, Article 106906

2022

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Laplace DLTS study of defects introduced in GaAs during sputter deposition of Au Schottky contacts

Materials science in semiconductor processing, 2022-12, Vol.152, p.107015, Article 107015

2022

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Structural, optical and electrical properties of a Schottky diode fabricated on Ce doped ZnO nanorods grown using a two step chemical bath deposition

Materials science in semiconductor processing, 2018-11, Vol.87, p.187-194

2018

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Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

The Journal of physics and chemistry of solids, 2020-07, Vol.142, p.109448, Article 109448

2020

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Density functional theory calculation of monolayer WTe2 transition metal dichalcogenides doped with H, Li and Be

Physica. B, Condensed matter, 2018-04, Vol.535, p.167-170

2018

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The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating

Materials science in semiconductor processing, 2019-10, Vol.101, p.82-86

2019

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Rare earth substitutional impurities in germanium: A hybrid density functional theory study

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-10, Vol.409, p.31-35

2017

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Rare earth interstitial-complexes in Ge: Hybrid density functional studies

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-10, Vol.409, p.9-13

2017

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The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-03, Vol.442, p.28-30

2019

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Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

Physica. B, Condensed matter, 2018-04, Vol.535, p.242-244

2018

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Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons

Surface & coatings technology, 2018-12, Vol.355, p.2-6

2018

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Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-10, Vol.409, p.41-45

2017

Volltextzugriff (PDF)

Thermal stability of defects introduced by electron beam deposition in p-type silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-10, Vol.409, p.46-49

2017

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Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

Materials science in semiconductor processing, 2019-08, Vol.99, p.23-27

2019

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The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Materials science in semiconductor processing, 2015-11, Vol.39, p.112-118

2015

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Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE)

Physica. B, Condensed matter, 2016-01, Vol.480, p.191-195

2016

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Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Investigating the impact of physical vapour deposition of palladium on electron-irradiated silicon substrates

Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes

Density functional theory calculation of monolayer WTe 2 transition metal dichalcogenides doped with H, Li and Be

Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

A hybrid functional calculation of Tm3+ defects in germanium (Ge)

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Defect levels induced by double substitution of B and N in 4H-SiC

Electronic properties and defect levels induced by n/p-type defect-complexes in Ge

Laplace DLTS study of defects introduced in GaAs during sputter deposition of Au Schottky contacts

Structural, optical and electrical properties of a Schottky diode fabricated on Ce doped ZnO nanorods grown using a two step chemical bath deposition

Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Density functional theory calculation of monolayer WTe2 transition metal dichalcogenides doped with H, Li and Be

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating

Rare earth substitutional impurities in germanium: A hybrid density functional theory study

Rare earth interstitial-complexes in Ge: Hybrid density functional studies

The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy

Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons

Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC

Thermal stability of defects introduced by electron beam deposition in p-type silicon

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE)

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