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Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Journal of materials science, 2019-08, Vol.54 (15), p.10798-10808

2019

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Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS

Journal of applied physics, 2012-05, Vol.111 (9), p.094504-094504-6

2012

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Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width

Materials research express, 2020-02, Vol.7 (2), p.25901

2020

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Effects of high temperature annealing on single crystal ZnO and ZnO devices

Journal of applied physics, 2012-04, Vol.111 (8), p.084503-084503-6

2012

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Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

Journal of materials science. Materials in electronics, 2023-06, Vol.34 (16), p.1312, Article 1312

2023

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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4402-4405

2009

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Electrical characterization of vapor-phase-grown single-crystal ZnO

Applied physics letters, 2002-02, Vol.80 (8), p.1340-1342

2002

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Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

Physica. B, Condensed matter, 2019-11, Vol.572, p.238-241

2019

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Rare Earth Interstitials in Ge: A Hybrid Density Functional Theory Study

Journal of electronic materials, 2017-02, Vol.46 (2), p.1022-1029

2017

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Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS

Physica. B, Condensed matter, 2012-05, Vol.407 (10), p.1641-1644

2012

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Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts

Physica. B, Condensed matter, 2012-05, Vol.407 (10), p.1529-1532

2012

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Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

Journal of physics. Condensed matter, 2018-05, Vol.30 (18), p.185702-185702

2018

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Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs

Semiconductor science and technology, 2018-12, Vol.33 (12), p.125011

2018

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Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures

Physica. B, Condensed matter, 2012-05, Vol.407 (10), p.1628-1630

2012

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Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

Physica. B, Condensed matter, 2014-04, Vol.439, p.119-121

2014

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Inductively coupled plasma induced deep levels in epitaxial n-GaAs

Physica. B, Condensed matter, 2012-05, Vol.407 (10), p.1497-1500

2012

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Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

Journal of electronic materials, 2016-08, Vol.45 (8), p.4177-4182

2016

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The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC

Applied physics. A, Materials science & processing, 2018-05, Vol.124 (5), p.1-7, Article 395

2018

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Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE)

Physica. B, Condensed matter, 2016-01, Vol.480, p.191-195

2016

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Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Physica. B, Condensed matter, 2016-01, Vol.480, p.196-200

2016

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Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons

Surface & coatings technology, 2018-12, Vol.355, p.2-6

2018

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Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

Physica. B, Condensed matter, 2018-04, Vol.535, p.242-244

2018

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Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4389-4392

2009

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Electrical characterization of defects introduced in Ge during electron beam deposition of different metals

Physica status solidi. A, Applications and materials science, 2008-01, Vol.205 (1), p.159-161

2008

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Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge

Journal of electronic materials, 2007-12, Vol.36 (12), p.1604-1607

2007

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Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS

Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width

Effects of high temperature annealing on single crystal ZnO and ZnO devices

Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Electrical characterization of vapor-phase-grown single-crystal ZnO

Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

Rare Earth Interstitials in Ge: A Hybrid Density Functional Theory Study

Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS

Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts

Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs

Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures

Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC

Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE)

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons

Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

Current–temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Electrical characterization of defects introduced in Ge during electron beam deposition of different metals

Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge

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