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VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

IEEE electron device letters, 2003-02, Vol.24 (2), p.99-101

2003

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Impact of Line-Edge Roughness on FinFET Matching Performance

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2466-2474

2007

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Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.256-262

2010

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Modeling of uniform switching RRAM devices and impact of critical defects

Microelectronic engineering, 2017-06, Vol.178, p.93-97

2017

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2287-2296

2008

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Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

IEEE transactions on nanotechnology, 2008-05, Vol.7 (3), p.291-298

2008

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Characteristics of cross-sectional atom probe analysis on semiconductor structures

Ultramicroscopy, 2011-05, Vol.111 (6), p.540-545

2011

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The effect of ketamine and D-cycloserine on the high frequency resting EEG spectrum in humans

Psychopharmacology, 2023-01, Vol.240 (1), p.59-75

2023

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Exploring the limits of stress-enhanced hole mobility

IEEE electron device letters, 2005-09, Vol.26 (9), p.652-654

2005

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Unsupervised Learning of Overlapping Image Components Using Divisive Input Modulation

Computational Intelligence and Neuroscience, 2009, Vol.2009 (1), p.381457-381457

2009

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2690-2698

2007

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Analysis of the parasitic S/D resistance in multiple-gate FETs

IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1132-1140

2005

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Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions

Microelectronic engineering, 2011-02, Vol.88 (2), p.155-158

2011

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Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping Memories

IEEE electron device letters, 2010-01, Vol.31 (1), p.77-79

2010

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Co-designing a data platform to impact nature policy and management: experiences from the Dutch Caribbean

Environmental science & policy, 2019-10, Vol.100, p.13-20

2019

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Study of electrical breakdown and secondary pull-in failure modes for NEM relays

Journal of micromechanics and microengineering, 2017-01, Vol.27 (1), p.15030

2017

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Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1393-1400

2000

Volltextzugriff (PDF)

Amorphous-crystalline phase transitions in chalcogenide materials for memory applications

Phase transitions, 2008-07, Vol.81 (7-8), p.773-790

2008

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Multi-gate devices for the 32 nm technology node and beyond

Solid-state electronics, 2008-09, Vol.52 (9), p.1291-1296

2008

Volltextzugriff (PDF)

Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

Microelectronics and reliability, 2010-03, Vol.50 (3), p.360-364

2010

Volltextzugriff (PDF)

On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n -channel metal-oxide-semiconductor transistors

Applied physics letters, 2005-05, Vol.86 (22), p.223509-223509-3

2005

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Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (\hbox)

IEEE electron device letters, 2007-12, Vol.28 (12), p.1089-1091

2007

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Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2197-S2210

2005

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Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

Microelectronics and reliability, 2005-05, Vol.45 (5-6), p.779-782

2005

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Short-channel epitaxial germanium pMOS transistors

Thin solid films, 2010, Vol.518 (6), p.S88-S91

2010

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VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

Impact of Line-Edge Roughness on FinFET Matching Performance

Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

Modeling of uniform switching RRAM devices and impact of critical defects

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

Characteristics of cross-sectional atom probe analysis on semiconductor structures

The effect of ketamine and D-cycloserine on the high frequency resting EEG spectrum in humans

Exploring the limits of stress-enhanced hole mobility

Unsupervised Learning of Overlapping Image Components Using Divisive Input Modulation

A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

Analysis of the parasitic S/D resistance in multiple-gate FETs

Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions

Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping Memories

Co-designing a data platform to impact nature policy and management: experiences from the Dutch Caribbean

Study of electrical breakdown and secondary pull-in failure modes for NEM relays

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

Amorphous-crystalline phase transitions in chalcogenide materials for memory applications

Multi-gate devices for the 32 nm technology node and beyond

Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures

On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n -channel metal-oxide-semiconductor transistors

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology (\hbox)

Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors

Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

Short-channel epitaxial germanium pMOS transistors

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