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Effect of top-cell CGS thickness on the performance of CGS/CIGS tandem solar cell

Solar energy, 2015-12, Vol.122, p.104-112

2015

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Time dependent bond arrangement approach to photo-induced changes in Ge30-xSbxSe70 thin films

Materials chemistry and physics, 2020-02, Vol.242, p.1, Article 122521

2020

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Electrical Conductivity Mechanism in Unconventional Lead Vanadate Glasses

Journal of low temperature physics, 2017-03, Vol.186 (5-6), p.372-384

2017

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Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

Journal of semiconductors, 2015-09, Vol.36 (9), p.15-19

2015

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Numerical simulation of the transient photoconductivity in hydrogenated amorphous silicon including localized-state electron hopping

Journal of physics. Condensed matter, 2007-10, Vol.19 (43), p.436220-436220 (12)

2007

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Time photocurrent response and the density of localised states in disordered semiconductors

Solid state communications, 2008-02, Vol.145 (5), p.316-320

2008

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Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity

Solid-state electronics, 2008, Vol.52 (1), p.73-77

2008

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Time dependent bond arrangement approach to photo-induced changes in Ge30-Sb Se70 thin films

Materials chemistry and physics, 2020-02, Vol.242, p.122521, Article 122521

2020

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Comparison of AC and DC constant photocurrent methods for determination of defect densities

Journal of non-crystalline solids, 2004-06, Vol.338, p.228-231

2004

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Numerical simulation of the steady state photoconductivity in hydrogenated amorphous silicon including localized state electron hopping

Journal of physics. Condensed matter, 2006-04, Vol.18 (15), p.3721-3734

2006

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Numerical simulation and analysis of the dark and illuminated J–V characteristics of a-Si-H p–i–n diodes

Journal of physics. Condensed matter, 2006-06, Vol.18 (23), p.5459-5471

2006

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Determination of the density of localized states in disordered semiconductors using transient photocurrent spectroscopy with a finite-width light pulse excitation

Philosophical magazine letters, 2008-03, Vol.88 (3), p.191-201

2008

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Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experiment

Semiconductor science and technology, 2005-01, Vol.20 (1), p.56-61

2005

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Influence of μc-Si:H tunnel recombination junction on the performance of a-Si:H/μc-Si:H tandem solar cell

Optik (Stuttgart), 2017-06, Vol.139, p.152-165

2017

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Numerical simulation of the defect density influence on the steady state response of a silicon-based p–i–n cell

Journal of physics. Condensed matter, 2004-03, Vol.16 (12), p.2003-2016

2004

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Optical characterization of the annealing effect on Ge5Te20Se75 thin films by variable angle of-incidence spectroscopic ellipsometry

Optik (Stuttgart), 2016-04, Vol.127 (8), p.3871-3877

2016

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Created defect under illumination in a-Si:H: hydrogenated or isolated dangling bond ?

Vacuum, 2004-07, Vol.75 (3), p.269-273

2004

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Challenges du diagnostic tardif du syndrome de Turner

Annales d'endocrinologie, 2017-09, Vol.78 (4), p.381-381

2017

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The influence of generation and transport processes in the constant photocurrent method

Journal of materials science. Materials in electronics, 2003-10, Vol.14 (10-12), p.681-684

2003

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Transient photoconductivity, density of tail states and doping effect in amorphous silicon

Solid state communications, 1999-01, Vol.112 (10), p.535-539

1999

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Defect pool model based transient photoconductivity and the conduction band tail profile in a-Si:H

Journal of physics. Condensed matter, 2001-12, Vol.13 (48), p.10969-10977

2001

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Variation and population structure in Aleppo pine (Pinus halepensis Mill.) in Algeria

Silvae genetica, 2003, Vol.52 (5-6), p.244-249

2003

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Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2004-11, Vol.230-232, p.221-232

2004

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Étiologies des pubertés précoces chez les enfants algériens

Annales d'endocrinologie, 2017-09, Vol.78 (4), p.284-284

2017

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Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment

Semiconductor science and technology, 2005, Vol.20, p.56-61

2005

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Effect of top-cell CGS thickness on the performance of CGS/CIGS tandem solar cell

Time dependent bond arrangement approach to photo-induced changes in Ge30-xSbxSe70 thin films

Electrical Conductivity Mechanism in Unconventional Lead Vanadate Glasses

Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

Numerical simulation of the transient photoconductivity in hydrogenated amorphous silicon including localized-state electron hopping

Time photocurrent response and the density of localised states in disordered semiconductors

Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity

Time dependent bond arrangement approach to photo-induced changes in Ge30-Sb Se70 thin films

Comparison of AC and DC constant photocurrent methods for determination of defect densities

Numerical simulation of the steady state photoconductivity in hydrogenated amorphous silicon including localized state electron hopping

Numerical simulation and analysis of the dark and illuminated J–V characteristics of a-Si-H p–i–n diodes

Determination of the density of localized states in disordered semiconductors using transient photocurrent spectroscopy with a finite-width light pulse excitation

Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experiment

Influence of μc-Si:H tunnel recombination junction on the performance of a-Si:H/μc-Si:H tandem solar cell

Numerical simulation of the defect density influence on the steady state response of a silicon-based p–i–n cell

Optical characterization of the annealing effect on Ge5Te20Se75 thin films by variable angle of-incidence spectroscopic ellipsometry

Created defect under illumination in a-Si:H: hydrogenated or isolated dangling bond ?

Challenges du diagnostic tardif du syndrome de Turner

The influence of generation and transport processes in the constant photocurrent method

Transient photoconductivity, density of tail states and doping effect in amorphous silicon

Defect pool model based transient photoconductivity and the conduction band tail profile in a-Si:H

Variation and population structure in Aleppo pine (Pinus halepensis Mill.) in Algeria

Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination

Étiologies des pubertés précoces chez les enfants algériens

Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment

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