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Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

Applied physics letters, 2024-05, Vol.124 (21)

2024

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Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.02SP49

2024

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Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Journal of applied physics, 2020-05, Vol.127 (18)

2020

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Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4067-4072

2020

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Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5060-5064

2019

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IEEE_Xplore

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

IEEE transactions on magnetics, 2022-05, Vol.58 (5), p.1-10

2022

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Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

Japanese Journal of Applied Physics, 2022-06, Vol.61 (SD), p.SD1024

2022

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Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1010

2023

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Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.950-955

2018

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Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers

2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.296-299

2017

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IEEE_Xplore

Reduction of Slow Trap Density in Al 2 O 3 /GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5060-5064

2019

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Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

IEEE transactions on electron devices, 2019-01, Vol.66 (12), p.5060

2019

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Evaluation and study of spin Seebeck effect in Pt/Y3Fe5O12/Gd3Ga5O12 and Pt/Y3Fe5O12/sapphire systems

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1)

2020

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Evaluation and study of spin Seebeck effect in Pt/Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 and Pt/Y 3 Fe 5 O 12 /sapphire systems

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.13001

2020

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Realization of MoTe 2 CMOS inverter by contact doping and channel encapsulation

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al 2 O 3 /plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1089

2023

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Enhanced contact properties of MoTe 2 -FET via laser-induced heavy doping

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1010

2023

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Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC)

2023

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Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeOx/(111) and (100) n-Ge MOS structures

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1089

2023

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Slow Trap Properties and Generation in Al 2 O 3 /GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

ACS applied electronic materials, 2019-03, Vol.1 (3), p.311-317

2019

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Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO x Interfacial Layers Formed by Plasma Pre-Oxidation

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.950-955

2018

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Slow Trap Properties and Generation in Al2O3/GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

ACS applied electronic materials, 2019-03, Vol.1 (3), p.311-317

2019

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Effectiveness of Synchronization and Cooperative Behavior of Multiple Robots based on Swarm AI

2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2019, p.341-344

2019

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Damage-Position Identification of Wooden-House Models for Structural Health Monitoring Using Machine Learning

2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2020, p.114-117

2020

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Improvement of Generalization Performance for Timber Health Monitoring using Machine Learning

2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2020, p.197-200

2020

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Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers

Reduction of Slow Trap Density in Al 2 O 3 /GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process

Evaluation and study of spin Seebeck effect in Pt/Y3Fe5O12/Gd3Ga5O12 and Pt/Y3Fe5O12/sapphire systems

Evaluation and study of spin Seebeck effect in Pt/Y 3 Fe 5 O 12 /Gd 3 Ga 5 O 12 and Pt/Y 3 Fe 5 O 12 /sapphire systems

Realization of MoTe 2 CMOS inverter by contact doping and channel encapsulation

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al 2 O 3 /plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Enhanced contact properties of MoTe 2 -FET via laser-induced heavy doping

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures

Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeOx/(111) and (100) n-Ge MOS structures

Slow Trap Properties and Generation in Al 2 O 3 /GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO x Interfacial Layers Formed by Plasma Pre-Oxidation

Slow Trap Properties and Generation in Al2O3/GeO x /Ge MOS Interfaces Formed by Plasma Oxidation Process

Effectiveness of Synchronization and Cooperative Behavior of Multiple Robots based on Swarm AI

Damage-Position Identification of Wooden-House Models for Structural Health Monitoring Using Machine Learning

Improvement of Generalization Performance for Timber Health Monitoring using Machine Learning

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