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Thinnest Nonvolatile Memory Based on Monolayer h‐BN

Advanced materials (Weinheim), 2019-04, Vol.31 (15), p.e1806790-n/a

2019

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Observation of single-defect memristor in an MoS2 atomic sheet

Nature nanotechnology, 2021-01, Vol.16 (1), p.58-62

2021

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Random Dopant Fluctuation in Limited-Width FinFET Technologies

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.2055-2060

2007

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Simulation-Based Study of Low Minimum Operating Voltage SRAM With Inserted-Oxide FinFETs and Gate-All-Around Transistors

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1823-1829

2022

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IEEE_Xplore

TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6586-6591

2021

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IEEE_Xplore

Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5529-5534

2021

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IEEE_Xplore

All-zigzag graphene nanoribbons for planar interconnect application

Journal of applied physics, 2017-07, Vol.122 (3)

2017

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Bilayer Modulation With Dual Vacancy Filaments by Intentionally Oxidized Titanium Oxide for Multilayer-hBN RRAM

IEEE transactions on nanotechnology, 2021, Vol.20, p.687-694

2021

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IEEE_Xplore

Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip Technology

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4193-4199

2017

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IEEE_Xplore

GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node

IEEE journal of the Electron Devices Society, 2017-05, Vol.5 (3), p.164-169

2017

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Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1754-1759

2019

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IEEE_Xplore

High-Density Reduced-Stack Logic Circuit Techniques Using Independent-Gate Controlled Double-Gate Devices

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2370-2377

2006

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IEEE_Xplore

Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications

IEEE journal on exploratory solid-state computational devices and circuits, 2023-12, Vol.9 (2), p.151-158

2023

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Variation-Aware Comparative Study of 10-nm GAA Versus FinFET 6-T SRAM Performance and Yield

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.3949-3954

2014

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IEEE_Xplore

Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.903-909

2016

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IEEE_Xplore

Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

IEEE electron device letters, 2017-01, Vol.38 (1), p.91-94

2017

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IEEE_Xplore

Design of Gate-All-Around Silicon MOSFETs for 6-T SRAM Area Efficiency and Yield

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2371-2377

2014

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IEEE_Xplore

A Predictive Compact Model of Bipolar RRAM Cells for Circuit Simulations

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2176-2183

2015

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IEEE_Xplore

Modeling of RRAM With Embedded Tunneling Barrier and Its Application in Logic in Memory

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1390-1396

2020

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Stack Gate Technique for Dopingless Bulk FinFETs

IEEE transactions on electron devices, 2014-04, Vol.61 (4), p.963-968

2014

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IEEE_Xplore

TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

IEEE electron device letters, 2014-11, Vol.35 (11), p.1091-1093

2014

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IEEE_Xplore

Growing Al2O3 by Ultrasonic Spray Pyrolysis for Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor Ultraviolet Photodetectors

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4062-4069

2014

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IEEE_Xplore

Novel high-density low-power logic circuit techniques using DG devices

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2339-2342

2005

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IEEE_Xplore

Optimal Design of Triple-Gate Devices for High-Performance and Low-Power Applications

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2423-2428

2008

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IEEE_Xplore

Performance Comparison of SRAM Designs Implemented with Silicon-On-Insulator Nanosheet Transistors and Bulk FinFETs

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 2023, p.73-76

2023

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IEEE_Xplore

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Thinnest Nonvolatile Memory Based on Monolayer h‐BN

Observation of single-defect memristor in an MoS2 atomic sheet

Random Dopant Fluctuation in Limited-Width FinFET Technologies

Simulation-Based Study of Low Minimum Operating Voltage SRAM With Inserted-Oxide FinFETs and Gate-All-Around Transistors

TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS

Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers

All-zigzag graphene nanoribbons for planar interconnect application

Bilayer Modulation With Dual Vacancy Filaments by Intentionally Oxidized Titanium Oxide for Multilayer-hBN RRAM

Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip Technology

GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node

Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology

High-Density Reduced-Stack Logic Circuit Techniques Using Independent-Gate Controlled Double-Gate Devices

Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications

Variation-Aware Comparative Study of 10-nm GAA Versus FinFET 6-T SRAM Performance and Yield

Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Design of Gate-All-Around Silicon MOSFETs for 6-T SRAM Area Efficiency and Yield

A Predictive Compact Model of Bipolar RRAM Cells for Circuit Simulations

Modeling of RRAM With Embedded Tunneling Barrier and Its Application in Logic in Memory

Stack Gate Technique for Dopingless Bulk FinFETs

TiO2-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Growing Al2O3 by Ultrasonic Spray Pyrolysis for Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor Ultraviolet Photodetectors

Novel high-density low-power logic circuit techniques using DG devices

Optimal Design of Triple-Gate Devices for High-Performance and Low-Power Applications

Performance Comparison of SRAM Designs Implemented with Silicon-On-Insulator Nanosheet Transistors and Bulk FinFETs

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