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The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2125-2131

2005

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Impact of Ion Energy and Species on Single Event Effects Analysis

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2312-2321

2007

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Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2419-2425

2007

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Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2886-2894

2008

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Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2880-2885

2008

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Generation and application of channeling X-rays using a novel, low-emittance electron beam—Status and plans

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-08, Vol.309, p.10-14

2013

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The effect of metallization Layers on single event susceptibility

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2189-2193

2005

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Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2182-2188

2005

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A screened Coulomb scattering module for displacement damage computations in Geant4

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3669-3678

2004

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Laser-Induced Current Transients in Silicon-Germanium HBTs

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2936-2942

2008

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A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2322-2329

2007

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Multi-Scale Simulation of Radiation Effects in Electronic Devices

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1891-1902

2008

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Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2167-2170

2009

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Contemporary x-ray wavelength metrology and traceability

Radiation physics and chemistry (Oxford, England : 1993), 2020-02, Vol.167, p.108392, Article 108392

2020

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Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3085-3092

2009

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Distribution of Proton-Induced Transients in Silicon Focal Plane Arrays

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2444-2449

2007

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Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1794-1798

2006

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Transient radiation effects in ultra-low noise HgCdTe IR detector arrays for space-based astronomy

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2657-2663

2005

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General Framework for Single Event Effects Rate Prediction in Microelectronics

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3098-3108

2009

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Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3130-3137

2009

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Multiple-Bit Upset in 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3259-3264

2006

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Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3356-3362

2006

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Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3115-3121

2009

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Validation of nuclear reaction models of 180MeV proton-induced fragmentation of 27Al

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-11, Vol.269 (21), p.2463-2468

2011

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Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3172-3179

2009

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The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

Impact of Ion Energy and Species on Single Event Effects Analysis

Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

Generation and application of channeling X-rays using a novel, low-emittance electron beam—Status and plans

The effect of metallization Layers on single event susceptibility

Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

A screened Coulomb scattering module for displacement damage computations in Geant4

Laser-Induced Current Transients in Silicon-Germanium HBTs

A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations

Multi-Scale Simulation of Radiation Effects in Electronic Devices

Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays

Contemporary x-ray wavelength metrology and traceability

Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

Distribution of Proton-Induced Transients in Silicon Focal Plane Arrays

Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology

Transient radiation effects in ultra-low noise HgCdTe IR detector arrays for space-based astronomy

General Framework for Single Event Effects Rate Prediction in Microelectronics

Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop

Multiple-Bit Upset in 130 nm CMOS Technology

Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Validation of nuclear reaction models of 180MeV proton-induced fragmentation of 27Al

Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials

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