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The Kondo Effect in an Artificial Quantum Dot Molecule

Science (American Association for the Advancement of Science), 2001-09, Vol.293 (5538), p.2221-2223

2001

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Transition between quantum states in a parallel-coupled double quantum dot

Physical review letters, 2004-04, Vol.92 (17), p.176801-176801, Article 176801

2004

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Time-dependent speckle in holographic optical coherence imaging and the health of tumor tissue

Optics letters, 2004-01, Vol.29 (1), p.68

2004

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High-voltage accumulation-layer UMOSFET's in 4H-SiC

IEEE electron device letters, 1998-12, Vol.19 (12), p.487-489

1998

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Subsurface charge accumulation imaging of a quantum Hall liquid

Nature (London), 1998-03, Vol.392 (6671), p.51-54

1998

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Status and prospects for SiC power MOSFETs

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.658-664

2002

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Surface roughening in ion implanted 4H-silicon carbide

Journal of electronic materials, 1999-03, Vol.28 (3), p.214-218

1999

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Phosphorus implantation into 4H-silicon carbide

Journal of electronic materials, 2000-02, Vol.29 (2), p.210-214

2000

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Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.349-352

2001

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2.6 kV 4H-SiC lateral DMOSFETs

IEEE electron device letters, 1998-04, Vol.19 (4), p.100-102

1998

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Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

Applied physics letters, 1990-09, Vol.57 (13), p.1331-1333

1990

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Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

Journal of electronic materials, 1998-04, Vol.27 (4), p.370-376

1998

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SiC power Schottky and PiN diodes

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.665-672

2002

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Elimination of beam walk-off in low-coherence off-axis photorefractive holography

Optics letters, 2001-03, Vol.26 (6), p.334

2001

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Carrier lifetime versus anneal in low temperature growth GaAs

Applied physics letters, 1993-10, Vol.63 (16), p.2248-2250

1993

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High-power narrow-band terahertz generation using large-aperture photoconductors

IEEE journal of quantum electronics, 1999-08, Vol.35 (8), p.1257-1268

1999

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Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

Applied physics letters, 1990-10, Vol.57 (15), p.1531-1533

1990

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Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC

Applied physics letters, 1997-04, Vol.70 (17), p.2280-2281

1997

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Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide

Journal of applied physics, 2000-06, Vol.87 (12), p.8773-8777

2000

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Monolithic NMOS digital integrated circuits in 6H-SiC

IEEE electron device letters, 1994-11, Vol.15 (11), p.455-457

1994

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Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy

Applied physics letters, 1997-05, Vol.70 (18), p.2419-2421

1997

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Ultrasound detection through turbid media

Optics letters, 2003-05, Vol.28 (10), p.819

2003

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The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs

Applied physics letters, 1996-09, Vol.69 (10), p.1465-1467

1996

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Femtosecond pulse shaping by dynamic holograms in photorefractive multiple quantum wells

Optics letters, 1997-05, Vol.22 (10), p.718

1997

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Comparison of terahertz waveforms measured by electro-optic and photoconductive sampling

Applied physics letters, 1998-11, Vol.73 (22), p.3184-3186

1998

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The Kondo Effect in an Artificial Quantum Dot Molecule

Transition between quantum states in a parallel-coupled double quantum dot

Time-dependent speckle in holographic optical coherence imaging and the health of tumor tissue

High-voltage accumulation-layer UMOSFET's in 4H-SiC

Subsurface charge accumulation imaging of a quantum Hall liquid

Status and prospects for SiC power MOSFETs

Surface roughening in ion implanted 4H-silicon carbide

Phosphorus implantation into 4H-silicon carbide

Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

2.6 kV 4H-SiC lateral DMOSFETs

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

SiC power Schottky and PiN diodes

Elimination of beam walk-off in low-coherence off-axis photorefractive holography

Carrier lifetime versus anneal in low temperature growth GaAs

High-power narrow-band terahertz generation using large-aperture photoconductors

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC

Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide

Monolithic NMOS digital integrated circuits in 6H-SiC

Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy

Ultrasound detection through turbid media

The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs

Femtosecond pulse shaping by dynamic holograms in photorefractive multiple quantum wells

Comparison of terahertz waveforms measured by electro-optic and photoconductive sampling

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