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Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects
IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.1822-1833
2009
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Compact physical models for multiwall carbon-nanotube interconnects
IEEE electron device letters, 2006-05, Vol.27 (5), p.338-340
2006
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Performance Modeling for Single- and Multiwall Carbon Nanotubes as Signal and Power Interconnects in Gigascale Systems
IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2574-2582
2008
Open Access
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Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI)
IEEE electron device letters, 2005-02, Vol.26 (2), p.84-86
2005
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Conductance Modeling for Graphene Nanoribbon (GNR) Interconnects
IEEE electron device letters, 2007-05, Vol.28 (5), p.428-431
2007
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Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration
IEEE journal of solid-state circuits, 2002-02, Vol.37 (2), p.183-190
2002
Open Access
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Resistivity of Graphene Nanoribbon Interconnects
IEEE electron device letters, 2009-06, Vol.30 (6), p.611-613
2009
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The impact of intrinsic device fluctuations on CMOS SRAM cell stability
IEEE journal of solid-state circuits, 2001-04, Vol.36 (4), p.658-665
2001
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A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs
IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1631-1637
2003
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Interconnect limits on gigascale integration (GSI) in the 21st century
Proceedings of the IEEE, 2001-03, Vol.89 (3), p.305-324
2001
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A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs
IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.1086-1090
2002
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Beyond Moore's Law: the interconnect era
Computing in science & engineering, 2003-01, Vol.5 (1), p.20-24
2003
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Monolayer metallic nanotube interconnects: promising candidates for short local interconnects
IEEE electron device letters, 2005-08, Vol.26 (8), p.544-546
2005
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Compact distributed RLC interconnect models-Part II: Coupled line transient expressions and peak crosstalk in multilevel networks
IEEE transactions on electron devices, 2000-11, Vol.47 (11), p.2078-2087
2000
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Compact physical IR-drop models for chip/package co-design of gigascale integration (GSI)
IEEE transactions on electron devices, 2005-06, Vol.52 (6), p.1087-1096
2005
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Electron Transport Modeling for Junctions of Zigzag and Armchair Graphene Nanoribbons (GNRs)
IEEE electron device letters, 2008-05, Vol.29 (5), p.497-499
2008
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The fundamental limit on binary switching energy for terascale integration (TSI)
IEEE journal of solid-state circuits, 2000-10, Vol.35 (10), p.1515-1516
2000
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Impact of electron-phonon scattering on the performance of carbon nanotube interconnects for GSI
IEEE electron device letters, 2005-07, Vol.26 (7), p.476-478
2005
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Integrated thermal-fluidic I/O interconnects for an on-chip microchannel heat sink
IEEE electron device letters, 2006-02, Vol.27 (2), p.117-119
2006
Open Access
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Low power microelectronics: retrospect and prospect
Proceedings of the IEEE, 1995-04, Vol.83 (4), p.619-635
1995
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Compact distributed RLC interconnect models - part IV: unified models for time delay, crosstalk, and repeater insertion
IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.1094-1102
2003
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Intrinsic MOSFET parameter fluctuations due to random dopant placement
IEEE transactions on very large scale integration (VLSI) systems, 1997-12, Vol.5 (4), p.369-376
1997
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Flexible pillars for displacement compensation in optical chip assembly
IEEE photonics technology letters, 2006-04, Vol.18 (8), p.974-976
2006
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Optimal global interconnects for GSI
IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.980-987
2003
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Compact distributed RLC interconnect models - part III: transients in single and coupled lines with capacitive load termination
IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.1081-1093
2003
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