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2018
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Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.126-127
- Leobandung, E.
- Nayakama, H.
- Mocuta, D.
- Miyamoto, K.
- Angyal, M.
- Meer, H.V.
- McStay, K.
- Ahsan, I.
- Allen, S.
- Azuma, A.
- Belyansky, M.
- Bentum, R.-V.
- Cheng, J.
- Chidambarrao, D.
- Dirahoui, B.
- Fukasawa, M.
- Gerhardt, M.
- Gribelyuk, M.
- Halle, S.
- Harifuchi, H.
- Harmon, D.
- Heaps-Nelson, J.
- Hichri, H.
- Ida, K.
- Inohara, M.
- Inouc, I.C.
- Jenkins, K.
- Kawamura, T.
- Kim, B.
- Ku, S.-K.
- Kumar, M.
- Lane, S.
- Liebmann, L.
- Logan, R.
- Melville, I.
- Miyashita, K.
- Mocuta, A.
- O'Neil, P.
- Ng, M.-F.
- Nogami, T.
- Nomura, A.
- Norris, C.
- Nowak, E.
- Ono, M.
- Panda, S.
- Penny, C.
- Radens, C.
- Ramachandran, R.
- Ray, A.
- Rhee, S.-H.
- Ryan, D.
- Shinohara, T.
- Sudo, G.
- Sugaya, F.
- Strane, J.
- Tan, Y.
- Tsou, L.
- Wang, L.
- Wirbeleit, F.
- Wu, S.
- Yamashita, T.
- Yan, H.
- Ye, Q.
- Yoneyama, D.
- Zamdmer, D.
- Zhong, H.
- Zhu, H.
- Zhu, W.
- Agnello, P.
- Bukofsky, S.
- Bronner, G.
- Crabbe, E.
- Freeman, G.
- Huang, S.-F.
- Ivers, T.
- Kuroda, H.
- McHerron, D.
- Pellerin, J.
- Toyoshima, Y.
- Subbanna, S.
- Kepler, N.
- Su, L.
2005
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2010 IEEE International SOI Conference (SOI), 2010, p.1-2
2010
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ECS transactions, 2013, Vol.52 (1), p.57-59
2013
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Radiology, 2005-11, Vol.237 (2), p.718
2005
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2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672), 2003, p.243-246
2003
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2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672), 2003, p.25-28
2003
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68th Device Research Conference, 2010, p.19-20
2010
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2012 IEEE International Conference on IC Design & Technology, 2012, p.1-4
2012
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2004
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2006 IEEE international SOI Conferencee Proceedings, 2006, p.95-96
2006
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Radiology, 2005-11, Vol.237 (2), p.718-726
2005
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2009 Symposium on VLSI Technology, 2009, p.140-141
- Greene, B.
- Liang, Q.
- Amarnath, K.
- Wang, Y.
- Schaeffer, J.
- Cai, M.
- Liang, Y.
- Saroop, S.
- Cheng, J.
- Rotondaro, A.
- Han, S.-J.
- Mo, R.
- McStay, K.
- Ku, S.
- Pal, R.
- Kumar, M.
- Dirahoui, B.
- Yang, B.
- Tamweber, F.
- Lee, W.-H.
- Steigerwalt, M.
- Weijtmans, H.
- Holt, J.
- Black, L.
- Samavedam, S.
- Turner, M.
- Ramani, K.
- Lee, D.
- Belyansky, M.
- Chowdhury, M.
- Aime, D.
- Min, B.
- van Meer, H.
- Yin, H.
- Chan, K.
- Angyal, M.
- Zaleski, M.
- Ogunsola, O.
- Child, C.
- Zhuang, L.
- Yan, H.
- Permanaa, D.
- Sleight, J.
- Guo, D.
- Mittl, S.
- Ioannou, D.
- Wu, E.
- Chudzik, M.
- Park, D.-G.
- Brown, D.
- Luning, S.
- Mocuta, D.
- Maciejewski, E.
- Henson, K.
- Leobandung, E.
2009
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Minerva medica, 2002-10, Vol.93 (5), p.389
2002
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2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517), 2001, p.85-88
2001
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2011 International Electron Devices Meeting, 2011, p.28.1.1-28.1.4
- Krishnan, S.
- Kwon, U.
- Moumen, N.
- Stoker, M. W.
- Harley, E. C. T.
- Bedell, S.
- Nair, D.
- Greene, B.
- Henson, W.
- Chowdhury, M.
- Prakash, D. P.
- Wu, E.
- Ioannou, D.
- Cartier, E.
- Na, M-H
- Inumiya, S.
- Mcstay, K.
- Edge, L.
- Iijima, R.
- Cai, J.
- Frank, M.
- Hargrove, M.
- Guo, D.
- Kerber, A.
- Jagannathan, H.
- Ando, T.
- Shepard, J.
- Siddiqui, S.
- Dai, M.
- Bu, H.
- Schaeffer, J.
- Jaeger, D.
- Barla, K.
- Wallner, T.
- Uchimura, S.
- Lee, Y.
- Karve, G.
- Zafar, S.
- Schepis, D.
- Wang, Y.
- Donaton, R.
- Saroop, S.
- Montanini, P.
- Liang, Y.
- Stathis, J.
- Carter, R.
- Pal, R.
- Paruchuri, V.
- Yamasaki, H.
- Lee, J-H
- Ostermayr, M.
- Han, J-P
- Hu, Y.
- Gribelyuk, M.
- Park, D-G
- Chen, X.
- Samavedam, S.
- Narasimha, S.
- Agnello, P.
- Khare, M.
- Divakaruni, R.
- Narayanan, V.
- Chudzik, M.
2011
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2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2007, p.218-222
2007
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2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4
2009
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2014 IEEE International Electron Devices Meeting, 2014, p.3.8.1-3.8.3
- Lin, C.-H
- Greene, B.
- Narasimha, S.
- Cai, J.
- Bryant, A.
- Radens, C.
- Narayanan, V.
- Linder, B.
- Ho, H.
- Aiyar, A.
- Alptekin, E.
- An, J.-J
- Aquilino, M.
- Bao, R.
- Basker, V.
- Breil, N.
- Brodsky, M.
- Chang, W.
- Clevenger, L.
- Chidambarrao, D.
- Christiansen, C.
- Conklin, D.
- DeWan, C.
- Dong, H.
- Economikos, L.
- Engel, B.
- Fang, S.
- Ferrer, D.
- Friedman, A.
- Gabor, A.
- Guarin, F.
- Guan, X.
- Hasanuzzaman, M.
- Hong, J.
- Hoyos, D.
- Jagannathan, B.
- Jain, S.
- Jeng, S.-J
- Johnson, J.
- Kannan, B.
- Ke, Y.
- Khan, B.
- Kim, B.
- Koswatta, S.
- Kumar, A.
- Kwon, T.
- Kwon, U.
- Lanzerotti, L.
- Lee, H.-K
- Lee, W.-H
- Levesque, A.
- Li, W.
- Li, Z.
- Liu, W.
- Mahajan, S.
- McStay, K.
- Nayfeh, H.
- Nicoll, W.
- Northrop, G.
- Ogino, A.
- Pei, C.
- Polvino, S.
- Ramachandran, R.
- Ren, Z.
- Robison, R.
- Saraf, I.
- Sardesai, V.
- Saudari, S.
- Schepis, D.
- Sheraw, C.
- Siddiqui, S.
- Song, L.
- Stein, K.
- Tran, C.
- Utomo, H.
- Vega, R.
- Wang, G.
- Wang, H.
- Wang, W.
- Wang, X.
- Wehelle-Gamage, D.
- Woodard, E.
- Xu, Y.
- Yang, Y.
- Zhan, N.
- Zhao, K.
- Zhu, C.
- Boyd, K.
- Engbrecht, E.
- Henson, K.
- Kaste, E.
- Krishnan, S.
- Maciejewski, E.
- Shang, H.
- Zamdmer, N.
- Divakaruni, R.
- Rice, J.
- Stiffler, S.
- Agnello, P.
2014
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2010 International Electron Devices Meeting, 2010, p.27.5.1-27.5.4
- Butt, N
- Mcstay, K
- Cestero, A
- Ho, H
- Kong, W
- Fang, S
- Krishnan, R
- Khan, B
- Tessier, A
- Davies, W
- Lee, S
- Zhang, Y
- Johnson, J
- Rombawa, S
- Takalkar, R
- Blauberg, A
- Hawkins, K V
- Liu, J
- Rosenblatt, S
- Goyal, P
- Gupta, S
- Ervin, J
- Li, Z
- Galis, S
- Barth, J
- Yin, M
- Weaver, T
- Li, J H
- Narasimha, S
- Parries, P
- Henson, W K
- Robson, N
- Kirihata, T
- Chudzik, M
- Maciejewski, E
- Agnello, P
- Stiffler, S
- Iyer, S S
2010
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PLoS genetics, 2019-05, Vol.15 (5), p.e1008157-e1008157
2019
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2006 International Electron Devices Meeting, 2006, p.1-4
- Wang, G.
- Cheng, K.
- Ho, H.
- Faltermeier, J.
- Kong, W.
- Kim, H.
- Cai, J.
- Tanner, C.
- McStay, K.
- Balasubramanyam, K.
- Pei, C.
- Ninomiya, L.
- Li, X.
- Winstel, K.
- Dobuzinsky, D.
- Naeem, M.
- Zhang, R.
- Deschner, R.
- Brodsky, M.J.
- Allen, S.
- Yates, J.
- Feng, Y.
- Marchetti, P.
- Norris, C.
- Casarotto, D.
- Benedict, J.
- Kniffm, A.
- Parise, D.
- Khan, B.
- Barth, J.
- Parries, P.
- Kirihata, T.
- Norum, J.
- Iyer, S.S.
2006
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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.180-181
2002
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- AKATSU, H
- WEIS, R
- STRANE, J
- GOEBEL, T
- KWON, O.-J
- SUNG, C. Y
- PARKINSON, P
- WILSON, K
- MCSTAY, I
- CHUDZIK, M
- DOBUZINSKY, D
- JACUNSKI, M
- CHENG, K
- RANSOM, C
- SETTLEMYER, K
- ECONOMIKOS, L
- SIMPSON, A
- KNORR, A
- NAEEM, M
- STOJAKOVIC, G
- ROBL, W
- GLUSCHENKOV, O
- LIEGL, B
- SEITZ, M
- WU, C.-H
- WU, Q
- LI, W.-K
- CHOI, C. J
- ARNOLD, N
- JOSEPH, T
- VARN, K
- WEYBRIGHT, M
- MCSTAY, K
- KANG, W.-T
- KIM, M-S
- LI, Y
- BUKOFSKY, S
- JAMMY, R
- SCHUTZ, R
- GUTMANN, A
- BERGNER, W
- DIVAKARUNI, R
- BACK, D
- CRABBE, E
- MUELLER, W
- RAMACHANDRAN, R
- BRONNER, G
- DYER, T
- KIM, B
- KIM, D.-K
- MALIK, R
2002
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