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Trends in the ultimate breakdown strength of high dielectric-constant materials

IEEE transactions on electron devices, 2003-08, Vol.50 (8), p.1771-1778

2003

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Time dependent dielectric breakdown physics – Models revisited

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1753-1760

McPherson, J.W.

2012

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Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.166-172

2003

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Reliability challenges for 45nm and beyond

2006 43rd ACM/IEEE Design Automation Conference, 2006, p.176-181

McPherson, J. W.

2006

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Reliability Trends with Advanced CMOS Scaling and The Implications for Design

2007 IEEE Custom Integrated Circuits Conference, 2007, p.405-412

McPherson, J.W.

2007

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Quantum Mechanical Treatment of Si-O Bond Breakage in Silica Under Time Dependent Dielectric Breakdown Testing

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.209-216

McPherson, J.W.

2007

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Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.390-398

2007

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Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.399-404

2007

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Stress-induced voiding under vias connected to wide Cu metal leads

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.312-321

2002

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Breakdown characteristics of interconnect dielectrics

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.466-473

2005

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A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.478-483

2006

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A complementary molecular-model (including field and current) for TDDB in SiO 2 dielectrics

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1591-1597

2000

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Acceleration Factors for Thin Gate Oxide Stressing

23rd International Reliability Physics Symposium, 1985, p.1-5

1985

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A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1591-1597

2000

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Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), 2000, p.348-353

2000

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Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.655-656

2006

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Reliability challenges for deep submicron interconnects

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1469-1477

1997

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Electromigration reliability improvement of W-plug vias by titanium layering

Proceedings of 1994 IEEE International Reliability Physics Symposium, 1994, p.173-177

1994

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Building-in reliability into VLSI junctions

IEEE transactions on semiconductor manufacturing, 1997-11, Vol.10 (4), p.495-497

1997

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Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173), 1998, p.47-56

1998

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Scaling-induced reductions in CMOS reliability margins and the escalating need for increased design-in reliability efforts

Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design, 2001, p.123-130

McPherson, J.W.

2001

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Stress Dependent Activation Energy

24th International Reliability Physics Symposium, 1986, p.12-18

McPherson, J.W.

1986

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Temperature-cycling acceleration factors for aluminium metallization failure in VLSI applications

28th Annual Proceedings on Reliability Physics Symposium, 1990, p.252-258

1990

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Via electromigration performance of Ti/W/Al-Cu(2%) multilayered metallization

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference, 1989, p.168-175

1989

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The impact of an external sodium diffusion source on the reliability of MOS circuitry

26th Annual Proceedings Reliability Physics Symposium 1988, 1988, p.167-172

1988

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Trends in the ultimate breakdown strength of high dielectric-constant materials

Time dependent dielectric breakdown physics – Models revisited

Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics

Reliability challenges for 45nm and beyond

Reliability Trends with Advanced CMOS Scaling and The Implications for Design

Quantum Mechanical Treatment of Si-O Bond Breakage in Silica Under Time Dependent Dielectric Breakdown Testing

Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time-Dependent Dielectric Breakdown

Time Dependent Dielectric Breakdown Characteristics of Low-k Dielectric (SiOC) Over a Wide Range of Test Areas and Electric Fields

Stress-induced voiding under vias connected to wide Cu metal leads

Breakdown characteristics of interconnect dielectrics

A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics

A complementary molecular-model (including field and current) for TDDB in SiO 2 dielectrics

Acceleration Factors for Thin Gate Oxide Stressing

A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics

Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process

Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric

Reliability challenges for deep submicron interconnects

Electromigration reliability improvement of W-plug vias by titanium layering

Building-in reliability into VLSI junctions

Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown

Scaling-induced reductions in CMOS reliability margins and the escalating need for increased design-in reliability efforts

Stress Dependent Activation Energy

Temperature-cycling acceleration factors for aluminium metallization failure in VLSI applications

Via electromigration performance of Ti/W/Al-Cu(2%) multilayered metallization

The impact of an external sodium diffusion source on the reliability of MOS circuitry

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