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Small-Pitch HgCdTe Photodetectors

Journal of electronic materials, 2014-08, Vol.43 (8), p.3041-3046

2014

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A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays

Journal of electronic materials, 2001-06, Vol.30 (6), p.590-594

2001

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Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance

Journal of electronic materials, 1999-06, Vol.28 (6), p.649-653

1999

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Large VLWIR Hg1−xCdxTe photovoltaic detectors

Journal of electronic materials, 2000-06, Vol.29 (6), p.630-635

2000

Volltextzugriff (PDF)

Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

Journal of electronic materials, 1998-06, Vol.27 (6), p.698-702

1998

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MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates

Journal of electronic materials, 1998-06, Vol.27 (6), p.546-549

1998

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GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

IEEE electron device letters, 1987-03, Vol.8 (3), p.121-123

1987

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Variable-area diode data analysis of surface and bulk effects in MWIR HgCdTe/CdTe/sapphire photodetectors

Semiconductor science and technology, 1993-06, Vol.8 (6S), p.946-952

1993

Volltextzugriff (PDF)

VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications

Journal of electronic materials, 1997-06, Vol.26 (6), p.656-661

1997

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High performance SWIR HgCdTe detector arrays

Journal of electronic materials, 1997-06, Vol.26 (6), p.649-655

1997

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Characterization of CdTe for HgCdTe surface passivation

Journal of electronic materials, 1995-09, Vol.24 (9), p.1175-1182

1995

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Infrared detector assemblies for the tropospheric emission spectrometer

2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484), 2000, Vol.3, p.193-205 vol.3

2000

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Microwave switching with parallel-resonated GaAs FETS

IEEE electron device letters, 1980-08, Vol.1 (8), p.156-158

1980

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New Waveguide Structures for Millimeter-Wave and Optical Integrated Circuits

IEEE transactions on microwave theory and techniques, 1975-10, Vol.23 (10), p.788-794

1975

Volltextzugriff (PDF)

Electrical profiling and optical activation studies of Be-implanted GaAs

Journal of applied physics, 1977-08, Vol.48 (8), p.3342-3346

1977

Volltextzugriff (PDF)

GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

IEEE electron device letters, 1982-02, Vol.3 (2), p.43-45

1982

Volltextzugriff (PDF)

Annealing studies of Be-doped GaAs grown by molecular beam epitaxy

Applied physics letters, 1978-07, Vol.33 (2), p.127-129

1978

Volltextzugriff (PDF)

Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling

Solid state communications, 1978-03, Vol.25 (12), p.1003-1008

1978

Volltextzugriff (PDF)

Photoluminescence from Be-implanted GaAs

Applied physics letters, 1975-11, Vol.27 (10), p.567-569

1975

Volltextzugriff (PDF)

Temperature dependence of photoluminescence from Be-implanted GaAs

Applied physics letters, 1976-05, Vol.28 (9), p.509-512

1976

Volltextzugriff (PDF)

MBE P-on-n (Hg 1-x Cd x Te) heterostructure detectors on silicon substrates

Journal of electronic materials, 1998-06, Vol.27 (6), p.546

1998

Volltextzugriff (PDF)

Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

Electronics letters, 1983-02, Vol.19 (4), p.128

1983

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Large VLWIR Hg sub(1-x)Cd sub(x)Te photovoltaic detectors

Journal of electronic materials, 2000-01, Vol.29 (6), p.630-635

2000

Volltextzugriff (PDF)

Microscopic defects on MBE grown LWIR Hg sub(1-x)Cd sub(x)Te material and their impact on device performance

Journal of electronic materials, 1999-01, Vol.28 (6), p.649-653

1999

Volltextzugriff (PDF)

Ion implanted GaAs bipolar transistors

Electronics letters, 1980-07, Vol.16 (16), p.637

1980

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Small-Pitch HgCdTe Photodetectors

A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays

Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance

Large VLWIR Hg1−xCdxTe photovoltaic detectors

Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates

GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

Variable-area diode data analysis of surface and bulk effects in MWIR HgCdTe/CdTe/sapphire photodetectors

VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications

High performance SWIR HgCdTe detector arrays

Characterization of CdTe for HgCdTe surface passivation

Infrared detector assemblies for the tropospheric emission spectrometer

Microwave switching with parallel-resonated GaAs FETS

New Waveguide Structures for Millimeter-Wave and Optical Integrated Circuits

Electrical profiling and optical activation studies of Be-implanted GaAs

GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications

Annealing studies of Be-doped GaAs grown by molecular beam epitaxy

Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling

Photoluminescence from Be-implanted GaAs

Temperature dependence of photoluminescence from Be-implanted GaAs

MBE P-on-n (Hg 1-x Cd x Te) heterostructure detectors on silicon substrates

Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

Large VLWIR Hg sub(1-x)Cd sub(x)Te photovoltaic detectors

Microscopic defects on MBE grown LWIR Hg sub(1-x)Cd sub(x)Te material and their impact on device performance

Ion implanted GaAs bipolar transistors

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